公开(公告)号：US20130011999A1

公开(公告)日：2013-01-10

申请号：US13613142

申请日：2012-09-13

Applicant: Hwang Kyu Yun ,  Jeffrey Leon ,  Raj Peddi ,  YounSang Kim

Inventor： Hwang Kyu Yun ,  Jeffrey Leon ,  Raj Peddi ,  YounSang Kim

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/784 ,  H01L21/822

Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.

Abstract translation: 将半导体晶片制备成单个半导体管芯的方法使用在研磨步骤和/或通孔微加工步骤之间的切割和粘合剂涂布步骤。

公开(公告)号：US08753959B2

公开(公告)日：2014-06-17

申请号：US13613142

申请日：2012-09-13

Applicant: Hwang Kyu Yun ,  Jeffrey Leon ,  Raj Peddi ,  YounSang Kim

Inventor： Hwang Kyu Yun ,  Jeffrey Leon ,  Raj Peddi ,  YounSang Kim

IPC: H01L21/78 ,  H01L21/784 ,  H01L21/822 ,  H01L21/67

CPC classification number: H01L21/78 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/784 ,  H01L21/822

Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.

Abstract translation: 将半导体晶片制备成单个半导体管芯的方法使用在研磨步骤和/或通孔微加工步骤之间的切割和粘合剂涂布步骤。

公开(公告)号：US5543493A

公开(公告)日：1996-08-06

申请号：US280769

申请日：1994-07-26

Applicant: Chan-eon Park ,  Hwang-kyu Yun ,  Sung-min Sim ,  Wan-gyun Choi

Inventor： Chan-eon Park ,  Hwang-kyu Yun ,  Sung-min Sim ,  Wan-gyun Choi

IPC: C08G73/10 ,  C08J7/12 ,  C08L79/08 ,  H01L21/312 ,  B05D3/10

CPC classification number: C08J7/12 ,  C08L79/08 ,  C08J2379/08

Abstract: A method for treating a polyimide surface which includes the steps of amine-treating the polyimide surface and drying the thusly amine-treated polyimide surface. The amine-treating step is preferably carried out by immersing the polyimide in an amine solution which includes an amine and a solvent. The amine is preferably an aliphatic, aromatic, or siloxane amine. The drying step is preferably carried out a temperature of about 50.degree.-200.degree. C. The polyimide is preferably a polyimide having at least one imide functional group in its main chain, and is most preferably a polycondensate of at least one dianhydride and at least one diamine.

Abstract translation: 一种处理聚酰亚胺表面的方法，包括胺处理聚酰亚胺表面并干燥胺处理的聚酰亚胺表面的步骤。 胺处理步骤优选通过将聚酰亚胺浸入包括胺和溶剂的胺溶液中来进行。 胺优选为脂族，芳族或硅氧烷胺。 干燥步骤优选在约-50℃〜200℃的温度下进行。聚酰亚胺优选为主链中具有至少一个酰亚胺官能团的聚酰亚胺，最优选为至少一种二酐的缩聚物，至少 一个二胺。