Multi-directional light scattering LED and manufacturing method thereof
    1.
    发明申请
    Multi-directional light scattering LED and manufacturing method thereof 有权
    多向光散射LED及其制造方法

    公开(公告)号:US20070246711A1

    公开(公告)日:2007-10-25

    申请号:US11409003

    申请日:2006-04-24

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22

    摘要: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

    摘要翻译: 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上,然后通过蚀刻去除。 第二半导体层的一部分,发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方,而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此,来自LED的光输出在多方向上散射。

    Manufacturing method of multi-directional light scattering LED
    3.
    发明授权
    Manufacturing method of multi-directional light scattering LED 有权
    多向光散射LED的制造方法

    公开(公告)号:US07632693B2

    公开(公告)日:2009-12-15

    申请号:US12149288

    申请日:2008-04-30

    IPC分类号: H01L29/00

    CPC分类号: H01L33/22

    摘要: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

    摘要翻译: 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上,然后通过蚀刻去除。 第二半导体层的一部分,发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方,而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此,来自LED的光输出在多方向上散射。

    LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF
    4.
    发明申请
    LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20080121907A1

    公开(公告)日:2008-05-29

    申请号:US11309445

    申请日:2006-08-08

    IPC分类号: H01L33/00

    摘要: An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.

    摘要翻译: LED包括基板,第一类型掺杂半导体层,第一电极,发光层,第二类型掺杂半导体层,第二电极,第一介电层和第一导电插塞。 在基板上形成第一型掺杂半导体层,依次在第一型掺杂半导体层的一部分上形成发光层,第二型掺杂半导体层和第二电极。 第一介电层形成在第一型掺杂半导体层的未被发光层覆盖的另一部分上。 形成在第一电介质层上的第一电极通过形成在第一介电层中的第一导电插塞与第一型掺杂半导体层电连接。 此外,第二电极与第二类型掺杂半导体层电连接。

    LIGHT-EMITTING DIODE PACKAGE
    5.
    发明申请
    LIGHT-EMITTING DIODE PACKAGE 审中-公开
    发光二极管封装

    公开(公告)号:US20070272930A1

    公开(公告)日:2007-11-29

    申请号:US11308926

    申请日:2006-05-26

    IPC分类号: H01L33/00

    摘要: A light-emitting diode package (LED package) includes a LED and a carrier. The LED includes a substrate, a semiconductor layer, a first electrode and a second electrode. The semiconductor layer is located on a surface of the substrate and has a rough surface. The semiconductor layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer and a light-emitting layer disposed between the two doped semiconductor layers. The first electrode and the second electrode are disposed on and electrically coupled the first-type doped semiconductor layer and the second-type doped semiconductor layer, respectively. The carrier has a rough carrying surface and includes a first contact pad and a second contact pad disposed on the rough carrying surface. The first electrode and the second electrode of the LED face the carrier and are electrically coupled to the first contact pad and a second contact pad, respectively.

    摘要翻译: 发光二极管封装(LED封装)包括LED和载体。 LED包括基板,半导体层,第一电极和第二电极。 半导体层位于基板的表面上,具有粗糙的表面。 半导体层包括第一掺杂半导体层,第二掺杂半导体层和设置在两个掺杂半导体层之间的发光层。 第一电极和第二电极分别设置在第一掺杂半导体层和第二掺杂半导体层上并电耦合。 载体具有粗糙的承载表面,并且包括设置在粗糙承载表面上的第一接触焊盘和第二接触焊盘。 LED的第一电极和第二电极面向载体并且分别电耦合到第一接触焊盘和第二接触焊盘。

    Multi-directional light scattering LED and manufacturing method thereof
    6.
    发明授权
    Multi-directional light scattering LED and manufacturing method thereof 有权
    多向光散射LED及其制造方法

    公开(公告)号:US07476912B2

    公开(公告)日:2009-01-13

    申请号:US11409003

    申请日:2006-04-24

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22

    摘要: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

    摘要翻译: 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上,然后通过蚀刻去除。 第二半导体层的一部分,发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方,而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此,来自LED的光输出在多方向上散射。

    Multi-directional light scattering LED and manufacturing method thereof
    7.
    发明申请
    Multi-directional light scattering LED and manufacturing method thereof 有权
    多向光散射LED及其制造方法

    公开(公告)号:US20080241979A1

    公开(公告)日:2008-10-02

    申请号:US12149288

    申请日:2008-04-30

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22

    摘要: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

    摘要翻译: 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上,然后通过蚀刻去除。 第二半导体层的一部分,发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方,而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此,来自LED的光输出在多方向上散射。