公开(公告)号：US20090127557A1

公开(公告)日：2009-05-21

申请号：US12268779

申请日：2008-11-11

Applicant: Tsung-Yen LIN ,  Ho-Hsuan Lin ,  Wen-Tseng Cheng ,  Shan-Hung Tsai

Inventor： Tsung-Yen LIN ,  Ho-Hsuan Lin ,  Wen-Tseng Cheng ,  Shan-Hung Tsai

IPC: H01L21/8238 ,  H01L29/04

CPC classification number: H01L27/127 ,  H01L21/26506 ,  H01L27/1214

Abstract: This invention provides a method for fabricating a polysilicon thin film layer, which performs a gas plasma treatment on channel regions defined in the polysilicon thin film layer after the polysilicon thin film layer is formed on a substrate. Threshold voltages for polysilicon thin film transistors formed subsequently are thus adjusted by the gas plasma treatment. A gate insulating layer is formed on the polysilicon thin film layer after the gas plasma treatment.

Abstract translation: 本发明提供了一种制造多晶硅薄膜层的方法，该多晶硅薄膜层在多晶硅薄膜层形成在基板上之后对在多晶硅薄膜层中限定的沟道区进行气体等离子体处理。 因此随后通过气体等离子体处理来调节形成的多晶硅薄膜晶体管的阈值电压。 在等离子体处理之后，在多晶硅薄膜层上形成栅极绝缘层。