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26 条记录 (耗时 0.017 秒)

    Assistance device of network system
    1.
    发明授权
    Assistance device of network system 有权
    网络系统辅助装置

    公开(公告)号：US09596124B2

    公开(公告)日：2017-03-14

    申请号：US14005324

    申请日：2011-03-23

    申请人： Hiromi Sasaki ,  Hiroshi Yoshida ,  Takeshi Jinkawa ,  Masaki Namie ,  Hirohito Mizumoto ,  Yutaka Tahara ,  Shigenori Sawada

    发明人： Hiromi Sasaki ,  Hiroshi Yoshida ,  Takeshi Jinkawa ,  Masaki Namie ,  Hirohito Mizumoto ,  Yutaka Tahara ,  Shigenori Sawada

    IPC分类号： G06F15/16 ,  H04L12/24 ,  H04L12/40 ,  H04L12/403 ,  H04L29/12

    CPC分类号： H04L41/04 ,  H04L12/40006 ,  H04L12/403 ,  H04L41/0853 ,  H04L41/0866 ,  H04L41/12 ,  H04L41/145 ,  H04L61/2038

    摘要： A design assistance device includes: a design information storage section configured to store design information containing at least information of slave devices and information of a topology in a network system in accordance with a design created by a user; an actual configuration information generation section configured to generate actual configuration information containing at least the information of the slave devices and the information of the topology in the actual network system; a comparison section configured to compare the design information and the actual configuration information; and an output section configured to generate a comparison screen indicating the respective configurations of the designed network system and the actual network system along with their commonalities and differences and outputting the comparison screen to a display device. Thus, a technology can be provided which assists the user to easily compare the designed network configuration and the actual machine's network configuration.

    摘要翻译： 设计辅助装置包括：设计信息存储部分，被配置为根据由用户创建的设计，在网络系统中存储至少包含从设备信息和拓扑信息的设计信息; 实际配置信息生成部，被配置为生成至少包含所述从设备的信息和所述实际网络系统中的拓扑的信息的实际配置信息; 配置为比较设计信息和实际配置信息的比较部分; 以及输出部，其被配置为生成指示所设计的网络系统和实际网络系统的各自配置及其共同点和差异的比较屏幕，并将比较屏幕输出到显示设备。 因此，可以提供一种技术，其帮助用户容易地比较设计的网络配置和实际机器的网络配置。

    Method of fabricating semiconductor device
    3.
    发明申请
    Method of fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US20090087957A1

    公开(公告)日：2009-04-02

    申请号：US12232885

    申请日：2008-09-25

    申请人： Hiromi Sasaki ,  Masashige Moritoki

    发明人： Hiromi Sasaki ,  Masashige Moritoki

    IPC分类号： H01L21/02

    CPC分类号： H01L21/31138 ,  H01L28/60

    摘要： Photoresist on a metal is removed with less oxidation of the metal surface by the invented ashing. During process, the matching of oxygen gas ratio and wafer temperature under downstream plasma which means no RF bias plasma is controlled for oxidation amount not to depend on ashing time with required photo resist rate in manufacturing.

    摘要翻译： 通过本发明的灰化，金属表面的氧化较少，金属上的光刻胶被去除。 在处理过程中，控制下游等离子体的氧气比和晶片温度的匹配，这意味着没有RF偏置等离子体的氧化量不依赖于制造时所需光刻胶的灰化时间。

    Apparatus for depositing a thin film on a data recording disk
    7.
    发明授权
    Apparatus for depositing a thin film on a data recording disk 有权
    用于在数据记录盘上沉积薄膜的装置

    公开(公告)号：US06571729B2

    公开(公告)日：2003-06-03

    申请号：US09985090

    申请日：2001-11-01

    申请人： Hiromi Sasaki ,  Osamu Watabe ,  Naoki Watanabe

    发明人： Hiromi Sasaki ,  Osamu Watabe ,  Naoki Watanabe

    IPC分类号： C23C1600

    CPC分类号： C23C14/568 ,  C23C16/54 ,  G11B5/8408 ,  Y10S428/90

    摘要： An apparatus for depositing a protective film on a data recording disk, including the steps of depositing a magnetic film layer as a data recording layer on a surface of a substrate while the substrate is at a magnetic film deposition temperature; heating the substrate with the magnetic film layer thereon to a protective film deposition temperature; and depositing a protective film on the magnetic film layer while the substrate is at the protective film deposition layer; wherein the protective film deposition temperature is higher than the magnetic film deposition temperature.

    摘要翻译： 一种用于在数据记录盘上沉积保护膜的装置，包括以下步骤：在衬底处于磁膜沉积温度的同时，在衬底的表面上沉积磁膜层作为数据记录层; 将其上的磁性膜层加热到保护膜沉积温度; 以及在所述基板处于保护膜沉积层的同时在所述磁性膜层上沉积保护膜; 其中保护膜沉积温度高于磁膜沉积温度。

    Plastics printing material and image fixing method for electrostatic printing with use of same
    8.
    发明授权
    Plastics printing material and image fixing method for electrostatic printing with use of same 失效

    公开(公告)号：US5079097A

    公开(公告)日：1992-01-07

    申请号：US257616

    申请日：1988-10-14

    申请人： Hiromi Sasaki ,  Masao Tojima ,  Satsuko Konishi ,  Hiroyuki Takana

    发明人： Hiromi Sasaki ,  Masao Tojima ,  Satsuko Konishi ,  Hiroyuki Takana

    IPC分类号： B41M5/52

    CPC分类号： B41M5/5254 ,  Y10T428/24802

    摘要： The printing materials of the invention includes a film or sheet prepared from a chlorinated polyethylene containing 10 to 50 wt. % of chlorine and obtained by chlorinating a polyethylene having a molecular weight of 10,000 to 200,000, or from a polymer mixture containing the chlorinated polyethylene; a laminate comprising the film or sheet, and a base material; and a product prepared by impregnating or coating a base material with a solution of the chlorinated polyethylene or the polymer mixture. With the latter two printing materials, the surface of the film or sheet is used as the surface to be printed on. The image fixing method of the invention for use in producing copies by electrostatic printing comprises forming a toner image on one of these printing materials, and thereafter treating the printing material with heat at 160.degree. to 250.degree. C. for 5 to 30 seconds.

    Method for refining hydroxides of niobium and tantalum containing transition metals
    9.
    发明授权
    Method for refining hydroxides of niobium and tantalum containing transition metals 失效
    铌和含钽过渡金属氢氧化物的精制方法

    公开(公告)号：US4942024A

    公开(公告)日：1990-07-17

    申请号：US364081

    申请日：1989-06-02

    申请人： Hiromi Sasaki ,  Tadasi Tanaka ,  Yasusi Muneno

    发明人： Hiromi Sasaki ,  Tadasi Tanaka ,  Yasusi Muneno

    IPC分类号： C01G33/00 ,  C01G35/00 ,  C22B3/10 ,  C22B3/16 ,  C22B3/34

    CPC分类号： C22B3/165 ,  C01G33/00 ,  C01G35/00 ,  C22B3/0031 ,  C22B3/10 ,  C01P2006/80 ,  Y02P10/234

    摘要： Refining of either niobium hydroxide or tantalum hydroxide containing transition metals as impurities is accomplished easily and economically by dissolving the metal hydroxide in an aqueous solution of either hydrofluoric acid or oxalic acid, adjusting the pH of the solution to 1 to 4 and adding ammonium pyrrolidinedithiocarbamate (APDC) to the solution while maintaining the temperature of the solution below 60.degree. C. The addition of APDC causes the transition metals to simultaneously precipitate as coordination compounds. The minimum amount of APDC is 0.05 wt % of Nb.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 that can be formed from Nb or Ta contained in the solution. After the treatment with APDC the pH of the solution is raised to 6 or above to precipitate the refined metal hydroxide.

    摘要翻译： 通过将金属氢氧化物溶解在氢氟酸或草酸的水溶液中，将溶液的pH调节至1至4并加入吡咯烷二硫代氨基甲酸铵（其中， APDC），同时将溶液的温度保持在60℃以下。加入APDC使过渡金属同时作为配位化合物沉淀。 APDC的最小量为可以由溶液中含有的Nb或Ta形成的Nb 2 O 5或Ta 2 O 5的0.05重量％。 用APDC处理后，将溶液的pH升至6以上，沉淀精制金属氢氧化物。

    Process for producing hydrogen chloride and ammonia
    10.
    发明授权
    Process for producing hydrogen chloride and ammonia 失效
    生产氯化氢和氨的方法

    公开(公告)号：US4293532A

    公开(公告)日：1981-10-06

    申请号：US154469

    申请日：1980-05-29

    申请人： Hiromi Sasaki ,  Yoshiyuki Takahara

    发明人： Hiromi Sasaki ,  Yoshiyuki Takahara

    IPC分类号： C01B7/05 ,  C01C1/02 ,  C01B7/08

    CPC分类号： C01B7/055 ,  C01C1/026 ,  C01C1/028

    摘要： A process for producing hydrogen chloride and ammonia, comprising the steps of carrying out the reaction of ammonium chloride with ammonium hydrogen sulfate in the state of molten salt to produce hydrogen chloride, and heating the reaction system at the above-mentioned reaction carrying step at a temperature of 300.degree. C. or higher to produce ammonia gas, thereby hydrogen chloride and ammonia can be obtained in high yields, overcoming problems encountered in conventional corresponding processes.

    摘要翻译： 一种生产氯化氢和氨的方法，包括以熔融盐的状态进行氯化铵与硫酸氢铵的反应以产生氯化氢的步骤，并在上述反应载体步骤中加热反应体系 温度在300℃以上以产生氨气，从而可以以高产率获得氯化氢和氨，克服了常规相应工艺中遇到的问题。