公开(公告)号：US20090026473A1

公开(公告)日：2009-01-29

申请号：US11915304

申请日：2006-05-26

申请人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/32 ,  H01L33/405

摘要： There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

摘要翻译： 提供了一种InGaAlN发光器件及其制造方法。 发光器件包括具有主表面和背表面的导电衬底，形成在衬底的主表面上的金属粘合层，形成在接合层上的光反射层，至少包括p- 以及设置在反射层上的n型InGaAlN层，与反射层直接接触的p型InGaAlN层和分别设置在所述n型InGaAlN层和导电基板的背面上的欧姆电极。

公开(公告)号：US20090050927A1

公开(公告)日：2009-02-26

申请号：US11910735

申请日：2006-04-14

申请人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/78 ,  H01L33/0095

摘要： There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.

摘要翻译： 提供了一种在硅衬底上制造InGaAlN膜的方法，其包括以下步骤：在硅衬底上形成具有凹槽和台面的图案，并在衬底表面上沉积InGaAlN膜，其中凹槽的深度为 大于6nm，并且形成在槽的两侧的台面上的InGaAlN膜在水平方向上断开。 该方法可以通过简单地处理基板来生长高质量，无裂纹和大面积的InGaAlN膜。 同时，还提供了通过使用硅衬底制造InGaAlN发光器件的方法。

公开(公告)号：US08384100B2

公开(公告)日：2013-02-26

申请号：US11915304

申请日：2006-05-26

申请人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/32 ,  H01L33/405

摘要： There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

摘要翻译： 提供了一种InGaAlN发光器件及其制造方法。 发光器件包括具有主表面和背表面的导电衬底，形成在衬底的主表面上的金属粘合层，形成在接合层上的光反射层，至少包括p- 以及设置在反射层上的n型InGaAlN层，与反射层直接接触的p型InGaAlN层和分别设置在所述n型InGaAlN层和导电基板的背面上的欧姆电极。

公开(公告)号：US07888779B2

公开(公告)日：2011-02-15

申请号：US11910735

申请日：2006-04-14

申请人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L29/06 ,  H01L21/203

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/78 ,  H01L33/0095

摘要： There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.

摘要翻译： 提供了一种在硅衬底上制造InGaAlN膜的方法，其包括以下步骤：在硅衬底上形成具有凹槽和台面的图案，并在衬底表面上沉积InGaAlN膜，其中凹槽的深度为 大于6nm，并且形成在槽的两侧的台面上的InGaAlN膜在水平方向上断开。 该方法可以通过简单地处理基板来生长高质量，无裂纹和大面积的InGaAlN膜。 同时，还提供了通过使用硅衬底制造InGaAlN发光器件的方法。