公开(公告)号：US20120018885A1

公开(公告)日：2012-01-26

申请号：US12960843

申请日：2010-12-06

Applicant: Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

Inventor： Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

IPC: H01L23/498

CPC classification number: H01L23/481 ,  H01L23/49816 ,  H01L23/49855 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor apparatus includes a base substrate and a logic chip disposed on the base substrate. The logic chip includes a memory control circuit, a first through silicon via, and a second through silicon via. The memory control circuit is disposed on a first surface of a substrate of the logic chip, and a memory chip is disposed on a second surface of the substrate of the logic chip. The first through silicon via electrically connects the memory control circuit and the memory chip, the second through silicon via is electrically connected to the memory chip and is configured to transmit power for the memory chip, the second through silicon via is electrically insulated from the logic chip, and the first surface of the substrate of the logic chip faces the base substrate.

Abstract translation: 半导体装置包括基底基板和布置在基底基板上的逻辑芯片。 逻辑芯片包括存储器控制电路，第一通孔硅通孔和第二硅通孔。 存储器控制电路设置在逻辑芯片的基板的第一表面上，并且存储芯片设置在逻辑芯片的基板的第二表面上。 第一通孔硅通过电连接存储器控制电路和存储器芯片，第二通孔硅通孔电连接到存储器芯片，并被配置为向存储器芯片发送功率，第二通孔硅通孔与逻辑电绝缘 芯片，并且逻辑芯片的基板的第一表面面向基底。

公开(公告)号：US08884416B2

公开(公告)日：2014-11-11

申请号：US12960843

申请日：2010-12-06

Applicant: Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

Inventor： Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

IPC: H01L23/02 ,  H01L23/48 ,  H01L25/065 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L23/481 ,  H01L23/49816 ,  H01L23/49855 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor apparatus includes a base substrate and a logic chip disposed on the base substrate. The logic chip includes a memory control circuit, a first through silicon via, and a second through silicon via. The memory control circuit is disposed on a first surface of a substrate of the logic chip, and a memory chip is disposed on a second surface of the substrate of the logic chip. The first through silicon via electrically connects the memory control circuit and the memory chip, the second through silicon via is electrically connected to the memory chip and is configured to transmit power for the memory chip, the second through silicon via is electrically insulated from the logic chip, and the first surface of the substrate of the logic chip faces the base substrate.

Abstract translation: 半导体装置包括基底基板和布置在基底基板上的逻辑芯片。 逻辑芯片包括存储器控制电路，第一通孔硅通孔和第二硅通孔。 存储器控制电路设置在逻辑芯片的基板的第一表面上，并且存储芯片设置在逻辑芯片的基板的第二表面上。 第一通孔硅通过电连接存储器控制电路和存储器芯片，第二通孔硅通孔电连接到存储器芯片，并被配置为向存储器芯片发送功率，第二通孔硅通孔与逻辑电绝缘 芯片，并且逻辑芯片的基板的第一表面面向基底。

公开(公告)号：US20110217372A1

公开(公告)日：2011-09-08

申请号：US13128072

申请日：2009-11-09

Applicant: Si Beum Lee ,  Il Hwan Cho ,  Go Eun Lee ,  Tae Kun An ,  Il Ki Hong ,  Seon Oh Jeong ,  Yong Taek Lee ,  Kyung Min Shin ,  Myeong Sik Yoon

Inventor： Si Beum Lee ,  Il Hwan Cho ,  Go Eun Lee ,  Tae Kun An ,  Il Ki Hong ,  Seon Oh Jeong ,  Yong Taek Lee ,  Kyung Min Shin ,  Myeong Sik Yoon

IPC: A61K9/20 ,  A61K31/167 ,  A61P25/04 ,  B29C67/20

CPC classification number: A61K9/0056

Abstract: Provided is a fast dissolving oral tablet, and a method for the production thereof, including the steps of: compressing a mixture of active ingredients, pharmaceutically acceptable additives, and supercritical fluid-soluble substances to produce the tablets; and allowing the tablets to contact a supercritical fluid to extract supercritical fluid-soluble substances from fine pores in the tablets.

Abstract translation: 本发明提供一种快速溶解性口服片剂及其制造方法，包括以下步骤：压缩活性成分，药学上可接受的添加剂和超临界流体可溶性物质的混合物以制备片剂; 并且允许片剂接触超临界流体以从片剂中的细孔提取超临界流体可溶性物质。

公开(公告)号：USD735213S1

公开(公告)日：2015-07-28

申请号：US29426836

申请日：2012-07-11

Applicant: Uni Young Kim ,  Go Eun Lee ,  Gang Seub Lee ,  Hyung Nam Lee

Designer： Uni Young Kim ,  Go Eun Lee ,  Gang Seub Lee ,  Hyung Nam Lee