公开(公告)号：US20060166831A1

公开(公告)日：2006-07-27

申请号：US10526745

申请日：2003-10-29

Applicant: Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

Inventor： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

IPC: H01L39/24

CPC classification number: H01L39/2461 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225

Abstract: The invention relates to a technique for forming a thin film of good quality on a base substance via an intermediate layer. Such a film formation technique is suitably applicable to formation of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. In the method of forming a thin film on a base substance via an intermediate layer, an interface energy Ea at an interface A between the base substance and the intermediate layer, an interface energy Eb at an interface B between the intermediate layer and the thin film, and an interface energy Ec at an interface C between the base substance and the thin film in a state where the intermediate layer is omitted are calculated, and then a substance for the intermediate layer is selected so as to satisfy conditions of Ea

Abstract translation: 本发明涉及通过中间层在基体上形成质量好的薄膜的技术。 这种成膜技术适用于形成可用于超导线材，超导装置等的氧化物高温超导体薄膜。 在通过中间层在基材上形成薄膜的方法中，在基材和中间层之间的界面A处的界面能量Ea，中间层和薄膜之间的界面B处的界面能量Eb ，并且计算在省略中间层的状态下在基体和薄膜之间的界面C处的界面能量Ec，然后选择中间层物质以满足Ea

公开(公告)号：US20060009362A1

公开(公告)日：2006-01-12

申请号：US10526896

申请日：2003-10-29

Applicant: Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

Inventor： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

IPC: H01L39/24

CPC classification number: H01L39/2458 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2461

Abstract: The invention relates to a technique for forming a single crystalline thin film of good quality on an underlayer. Such a technique is suitably applicable to provision of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. The single crystalline thin film formed on a substratum is made of a substance different from that of the substratum. A specific atomic layer contained in common in the substratum and the thin film is shared at an interface between the substratum and the thin film. In a region as adjacent to the interface as 100 or fewer unit cells of the thin film apart from the interface, a ratio of crystalline region having grown with an orientation of ±2 degrees or less deviation angle on the basis of a crystal orientation of the substratum is 50% or more.

Abstract translation: 本发明涉及一种在底层上形成质量好的单晶薄膜的技术。 这种技术适用于提供可用于超导线材，超导装置等的氧化物高温超导体薄膜。 在基底上形成的单晶薄膜由与底层不同的物质制成。 在基底和薄膜中共同包含的特定原子层在基底和薄膜之间的界面处共享。 在与接口相邻的区域中，与界面相比，薄膜的单元电池为100个或更少，根据晶体取向为±2度以下的取向生长的结晶区域的比例 基质为50％以上。