公开(公告)号：US07089514B2

公开(公告)日：2006-08-08

申请号：US10710879

申请日：2004-08-10

申请人： James W. Adkisson ,  Greg Bazan ,  John M. Cohn ,  Francis Gravel ,  Leendert M. Huisman ,  Phillip J. Nigh ,  Leah M. P. Pastel ,  Kenneth Rowe ,  Thomas G. Sopchak ,  David E. Sweenor

发明人： James W. Adkisson ,  Greg Bazan ,  John M. Cohn ,  Francis Gravel ,  Leendert M. Huisman ,  Phillip J. Nigh ,  Leah M. P. Pastel ,  Kenneth Rowe ,  Thomas G. Sopchak ,  David E. Sweenor

IPC分类号： G06F17/50

CPC分类号： G01R31/31718 ,  G01R31/318342

摘要： A method for defect diagnosis of semiconductor chip. The method comprises the steps of (a) identifying M design structures and N physical characteristics of the circuit design, wherein M and N are positive integers, wherein each design structure of the M design structures is testable as to pass or fail, and wherein each physical characteristic of the N physical characteristics is present in at least one design structure of the M design structures; (b) for each design structure of the M design structures of the circuit design, determining a fail rate and determining whether the fail rate is high or low; and (c) if every design structure of the M design structures in which a physical characteristic of the N physical characteristics is present has a high fail rate, then flagging the physical characteristic as being likely to contain at least a defect.

摘要翻译： 一种半导体芯片缺陷诊断方法。 该方法包括以下步骤：（a）识别电路设计的M个设计结构和N个物理特性，其中M和N是正整数，其中M个设计结构的每个设计结构可以通过或失败，并且其中每个 N物理特性的物理特性存在于M设计结构的至少一个设计结构中; （b）对于电路设计的M设计结构的每个设计结构，确定故障率并确定故障率是高还是低; 和（c）如果存在N个物理特性的物理特性的M设计结构的每个设计结构具有高故障率，则将物理特性标记为可能至少包含缺陷。

公开(公告)号：US20060036975A1

公开(公告)日：2006-02-16

申请号：US10710879

申请日：2004-08-10

申请人： James Adkisson ,  Greg Bazan ,  John Cohn ,  Francis Gravel ,  Leendert Huisman ,  Phillip Nigh ,  Leah Pastel ,  Kenneth Rowe ,  Thomas Sopchak ,  David Sweenor

发明人： James Adkisson ,  Greg Bazan ,  John Cohn ,  Francis Gravel ,  Leendert Huisman ,  Phillip Nigh ,  Leah Pastel ,  Kenneth Rowe ,  Thomas Sopchak ,  David Sweenor

IPC分类号： G06F17/50

CPC分类号： G01R31/31718 ,  G01R31/318342

摘要： A method for defect diagnosis of semiconductor chip. The method comprises the steps of (a) identifying M design structures and N physical characteristics of the circuit design, wherein M and N are positive integers, wherein each design structure of the M design structures is testable as to pass or fail, and wherein each physical characteristic of the N physical characteristics is present in at least one design structure of the M design structures; (b) for each design structure of the M design structures of the circuit design, determining a fail rate and determining whether the fail rate is high or low; and (c) if every design structure of the M design structures in which a physical characteristic of the N physical characteristics is present has a high fail rate, then flagging the physical characteristic as being likely to contain at least a defect.

摘要翻译： 一种半导体芯片缺陷诊断方法。 该方法包括以下步骤：（a）识别电路设计的M个设计结构和N个物理特性，其中M和N是正整数，其中M个设计结构的每个设计结构可以通过或失败，并且其中每个 N物理特性的物理特性存在于M设计结构的至少一个设计结构中; （b）对于电路设计的M设计结构的每个设计结构，确定故障率并确定故障率是高还是低; 和（c）如果存在N个物理特性的物理特性的M设计结构的每个设计结构具有高故障率，则将物理特性标记为可能至少包含缺陷。