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1.发明申请METHOD OF FABRICATING THIN FILM TRANSISTOR AND ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME 有权制造薄膜晶体管的方法和包括其的液晶显示装置的阵列基板公开(公告)号：US20080227243A1
公开(公告)日：2008-09-18
申请号：US11965423
申请日：2007-12-27
申请人： Hee-Jung YANG , Dong-sun KIM , Du-Seok OH , Won-Joon HO
发明人： Hee-Jung YANG , Dong-sun KIM , Du-Seok OH , Won-Joon HO
IPC分类号： H01L21/768
CPC分类号： H01L29/458 , H01L21/2855 , H01L21/76841 , H01L27/124 , H01L27/1288
摘要： According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.
摘要翻译： 根据一个实施例，制造薄膜晶体管的方法包括在衬底上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层，所述半导体层对应于所述栅电极; 在所述半导体层上形成第一和第二屏障图案，所述第一和第二屏障图案包括氮化铜; 以及分别在第一和第二阻挡图案上形成源极和漏极，源极和漏极包括纯铜。
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2.发明授权Method of fabricating thin film transistor and array substrate for liquid crystal display device including the same 有权制造包括该薄膜晶体管的液晶显示装置的薄膜晶体管和阵列基板的方法公开(公告)号：US07687333B2
公开(公告)日：2010-03-30
申请号：US11965423
申请日：2007-12-27
申请人： Hee-Jung Yang , Dong-sun Kim , Du-Seok Oh , Won-Joon Ho
发明人： Hee-Jung Yang , Dong-sun Kim , Du-Seok Oh , Won-Joon Ho
IPC分类号： H01L21/336
CPC分类号： H01L29/458 , H01L21/2855 , H01L21/76841 , H01L27/124 , H01L27/1288
摘要： According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.
摘要翻译： 根据一个实施例，制造薄膜晶体管的方法包括在衬底上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层，所述半导体层对应于所述栅电极; 在所述半导体层上形成第一和第二屏障图案，所述第一和第二屏障图案包括氮化铜; 以及分别在第一和第二阻挡图案上形成源极和漏极，源极和漏极包括纯铜。
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