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公开(公告)号：US10913212B2
公开(公告)日：2021-02-09
申请号：US15932465
申请日：2018-03-01
Applicant: Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools
Inventor： Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools
IPC: H05B6/68 , H05B6/64 , B29C65/14 , H01P1/26 , H01P1/22 , H01P3/123 , B29C65/00 , B29C65/48 , H01Q13/02 , B29C73/34 , B29L31/30 , B29C73/12 , B29C35/08
Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service.
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公开(公告)号：US20180126659A1
公开(公告)日：2018-05-10
申请号：US15731881
申请日：2017-08-18
Applicant: Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst
Inventor： Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst
CPC classification number: B29C65/5014 , B29C65/1425 , B29C65/1438 , B29C65/1483 , B29C65/3408 , H01J37/32229 , H01J37/32302 , H05B6/64
Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.
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公开(公告)号：US20110226759A1
公开(公告)日：2011-09-22
申请号：US13065606
申请日：2011-03-25
Applicant: Joseph M. Wander , Zakaryae Fathi , Keith R. Hicks , Clayton R. DeCamillis , Iftikhar Ahmad
Inventor： Joseph M. Wander , Zakaryae Fathi , Keith R. Hicks , Clayton R. DeCamillis , Iftikhar Ahmad
IPC: H05B6/68
CPC classification number: H05B6/80 , H01L21/324 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L22/26 , H05B6/6411 , H05B6/645 , H05B6/806
Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.
Abstract translation: 一种用于加热半导体晶片的装置包括：微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 夹具包括用于晶片的介电机械支撑件和接地的金属环，其可移动地定位成平行于晶片与晶片一定距离并与其同心，以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括：a。 将晶片放置在微波腔中; b。 将晶片支撑在包括电介质晶片支撑件和可移动地定位在离晶片一定距离处的接地金属环的固定器上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。
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公开(公告)号：US20200368975A1
公开(公告)日：2020-11-26
申请号：US16989319
申请日：2020-08-10
Applicant: Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools , Robert J. Schauer
Inventor： Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools , Robert J. Schauer
Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service. A related method is also disclosed.
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公开(公告)号：US09048270B2
公开(公告)日：2015-06-02
申请号：US13065606
申请日：2011-03-25
Applicant: Joseph M. Wander , Zakaryae Fathi , Keith R. Hicks , Clayton R. DeCamillis , Iftikhar Ahmad
Inventor： Joseph M. Wander , Zakaryae Fathi , Keith R. Hicks , Clayton R. DeCamillis , Iftikhar Ahmad
CPC classification number: H05B6/80 , H01L21/324 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L22/26 , H05B6/6411 , H05B6/645 , H05B6/806
Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.
Abstract translation: 一种用于加热半导体晶片的装置包括：微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 固定装置包含用于晶片的介电机械支撑件和接地的金属环，其可移动地定位成平行于与晶片相距一定距离的晶片并且与晶片同心，以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括：a。 将晶片放置在微波腔中; b。 将晶片支撑在具有电介质晶片支架和可移动地定位在离晶片一定距离处的接地金属环的固定装置上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。
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Patent Agency Ranking
公开(公告)号：US10780647B2
公开(公告)日：2020-09-22
申请号：US15732338
申请日：2017-10-26
Applicant: Iftikhar Ahmad , Clayton R. DeCamillis , Richard C. Hazelhurst , Michael L. Hampton
Inventor： Iftikhar Ahmad , Clayton R. DeCamillis , Richard C. Hazelhurst , Michael L. Hampton
Abstract: A microwave processing system includes: a broadband variable frequency microwave (VFM) source; a plurality of waveguide applicators, each of which includes a waveguide transition and is capable of supporting a selected subset of frequencies within the bandwidth of the broadband VFM source; a microwave switching means allowing the microwave source to be connected to any one of the waveguide transitions so that microwave power is delivered to the corresponding waveguide applicator; and wherein each of the waveguide applicators includes at least one channel through which a microwave transparent tube may be run so that process fluid flowing through the tube may be exposed to microwave power in the applicator.
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公开(公告)号：US20180257308A1
公开(公告)日：2018-09-13
申请号：US15932465
申请日：2018-03-01
Applicant: Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools
Inventor： Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools
CPC classification number: B29C65/1425 , B29C65/4805 , B29C66/21 , B29C66/7212 , B29C73/12 , B29C73/34 , B29C2035/0855 , B29L2031/3005 , H01P1/222 , H01P1/264 , H01P3/123 , H01Q13/0266 , H01Q13/0275
Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service.A related method is also disclosed.
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公开(公告)号：US20180130638A1
公开(公告)日：2018-05-10
申请号：US15732338
申请日：2017-10-26
Applicant: Iftikhar Ahmad , Clayton R. DeCamillis , Richard C. Hazelhurst , Michael L. Hampton
Inventor： Iftikhar Ahmad , Clayton R. DeCamillis , Richard C. Hazelhurst , Michael L. Hampton
IPC: H01J37/32
CPC classification number: B29C65/5014 , B29C65/1425 , B29C65/1438 , B29C65/1483 , B29C65/3408 , H01J37/32229 , H01J37/32302 , H05B6/64
Abstract: A microwave processing system includes: a broadband variable frequency microwave (VFM) source; a plurality of waveguide applicators, each of which includes a waveguide transition and is capable of supporting a selected subset of frequencies within the bandwidth of the broadband VFM source; a microwave switching means allowing the microwave source to be connected to any one of the waveguide transitions so that microwave power is delivered to the corresponding waveguide applicator; and wherein each of the waveguide applicators includes at least one channel through which a microwave transparent tube may be run so that process fluid flowing through the tube may be exposed to microwave power in the applicator. A related method is also disclosed.
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公开(公告)号：US20090283516A1
公开(公告)日：2009-11-19
申请号：US12381794
申请日：2009-03-17
Applicant: Clayton R. DeCamillis , Lars Haubold , Richard C. Hazlehurst , Jerry K. Wessel
Inventor： Clayton R. DeCamillis , Lars Haubold , Richard C. Hazlehurst , Jerry K. Wessel
IPC: H05B6/70
CPC classification number: H05B6/705 , H05B6/6402
Abstract: A microwave power supply includes a magnetron, a waveguide configured to carry microwave power from the magnetron to a selected load, and an adjustable impedance element connected to the waveguide at a location upstream from the magnetron. The power supply may further include provision for varying the filament voltage to the magnetron tube. In the associated method, the adjustable upstream impedance and the adjustable filament voltage may be combined (and may be adjusted iteratively) to achieve high Q output. The load may be an applicator cavity for processing selected materials. The invention is particularly suitable for high Q cavities, such as single mode cavities, where it is desirable to match the output of the microwave source to the characteristics of the cavity for efficient operation. The adjustable upstream impedance element represents an electrical characteristic that may be achieved through various physically adjustable devices such as a movable backwall, a sliding short, a stub tuner, or an adjustable iris.
Abstract translation: 微波电源包括磁控管，被配置为将微波功率从磁控管传送到所选择的负载的波导以及在磁控管上游的位置处连接到波导的可调阻抗元件。 电源还可以包括用于改变对磁控管的灯丝电压。 在相关联的方法中，可调节的上游阻抗和可调节灯丝电压可以组合（并且可以被迭代地调整）以实现高Q输出。 负载可以是用于处理所选材料的施加器腔。 本发明特别适合于高Q腔，例如单模腔，其中期望将微波源的输出与腔的特性相匹配以进行有效的操作。 可调节的上游阻抗元件表示可以通过各种物理上可调整的装置（例如可移动的后壁，滑动短路，短线调谐器或可调节的虹膜）实现的电特性。
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公开(公告)号：US11633922B2
公开(公告)日：2023-04-25
申请号：US16894819
申请日：2020-06-07
Applicant: Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools , Robert J. Schauer
Inventor： Iftikhar Ahmad , Keith R. Hicks , Andrew Cardin , Clayton R. DeCamillis , Richard C. Hazelhurst , Angelo Luciano , Andrew Bools , Robert J. Schauer
Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.
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