公开(公告)号：US10202543B2

公开(公告)日：2019-02-12

申请号：US14196123

申请日：2014-03-04

申请人： Georgeta Masson ,  Kari N. Haley ,  Brian Theobald ,  Benjamin Daniel Mangum ,  Juanita N. Kurtin

发明人： Georgeta Masson ,  Kari N. Haley ,  Brian Theobald ,  Benjamin Daniel Mangum ,  Juanita N. Kurtin

IPC分类号： C08K3/10 ,  C08K9/10 ,  B82Y30/00 ,  B82Y40/00 ,  C08L83/04 ,  C09K11/02 ,  C09K11/08

摘要： Quantum dot delivery methods are described. In a first example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles. The method also involves forming a dispersion of the plurality of nano-particles in a medium for delivery or storage, wherein the medium is free of organic solvent. In a second example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles in an organic solvent. The method also involves drying the plurality of nano-particles for delivery or storage, the drying removing entirely all of the organic solvent.

公开(公告)号：US20160276527A9

公开(公告)日：2016-09-22

申请号：US13903890

申请日：2013-05-28

申请人： Juanita N. KURTIN ,  Matthew J. CARILLO ,  Steven M. HUGHES ,  Brian THEOBALD ,  Colin C. REESE ,  Oun-Ho PARK ,  Georgeta MASSON

发明人： Juanita N. KURTIN ,  Matthew J. CARILLO ,  Steven M. HUGHES ,  Brian THEOBALD ,  Colin C. REESE ,  Oun-Ho PARK ,  Georgeta MASSON

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  B01J13/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628 ,  H01L33/005 ,  H01L33/04 ,  H01L33/502

摘要： Lighting apparatus including a light emitting diode and a plurality of semiconductor structures. Each semiconductor structure includes a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%. An insulator layer encapsulates the quantum dot.

公开(公告)号：US20160141463A1

公开(公告)日：2016-05-19

申请号：US15004478

申请日：2016-01-22

申请人： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

发明人： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

IPC分类号： H01L33/50

CPC分类号： H01L33/502 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/005 ,  H01L33/06 ,  H01L33/56 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0083 ,  Y10S977/744 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/89 ,  Y10S977/95

摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

摘要翻译： 具有纳米晶核和对应的纳米晶体壳和绝缘体涂层的半导体结构，其中所述半导体结构包括由第一半导体材料构成的各向异性纳米晶核和由围绕所述各向异性纳米晶核的第二不同半导体材料组成的各向异性纳米晶体壳。 各向异性纳米晶核和各向异性纳米晶体壳形成量子点。 绝缘体层封装纳米晶体壳和各向异性纳米晶核。

公开(公告)号：US20130320298A1

公开(公告)日：2013-12-05

申请号：US13903883

申请日：2013-05-28

申请人： Juanita N. KURTIN ,  Matthew J. CARILLO ,  Steven M. HUGHES ,  Brian THEOBALD ,  Colin C. REESE ,  Oun-Ho PARK ,  Georgeta MASSON

发明人： Juanita N. KURTIN ,  Matthew J. CARILLO ,  Steven M. HUGHES ,  Brian THEOBALD ,  Colin C. REESE ,  Oun-Ho PARK ,  Georgeta MASSON

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  B01J13/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628 ,  H01L33/002 ,  H01L33/005 ,  H01L33/04 ,  H01L33/502

摘要： A semiconductor structure comprises a nanocrystalline core of a first semiconductor material, a nanocrystalline shell of a second, different, semiconductor material at least partially surrounding the nanocrystalline core, and an insulator layer encapsulating the nanocrystalline shell and core, wherein an outer surface of the insulator layer is ligand-functionalized.

摘要翻译： 半导体结构包括第一半导体材料的纳米晶核，至少部分地围绕纳米晶核的第二不同半导体材料的纳米晶体壳，以及封装纳米晶体壳和芯的绝缘体层，其中绝缘体的外表面 层是配体官能化的。

公开(公告)号：US20130112941A1

公开(公告)日：2013-05-09

申请号：US13485761

申请日：2012-05-31

申请人： Juanita Kurtin ,  Matthew J. Carillo ,  Steven Hughes ,  Brian Theobald ,  Colin Reese ,  Oun-Ho Park ,  Georgeta Masson

发明人： Juanita Kurtin ,  Matthew J. Carillo ,  Steven Hughes ,  Brian Theobald ,  Colin Reese ,  Oun-Ho Park ,  Georgeta Masson

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  B01J13/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628 ,  H01L33/002 ,  H01L33/005 ,  H01L33/04 ,  H01L33/502

摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

摘要翻译： 描述了具有纳米晶核和对应的纳米晶体壳和绝缘体涂层的半导体结构。 在一个示例中，半导体结构包括由第一半导体材料构成并且具有但不包括1.0和2.0之间的纵横比的各向异性纳米晶核。 半导体结构还包括由至少部分地围绕各向异性纳米晶核的第二不同的半导体材料组成的纳米晶体壳。 绝缘体层封装纳米晶体壳和各向异性纳米晶核。

公开(公告)号：US20150236222A1

公开(公告)日：2015-08-20

申请号：US14704867

申请日：2015-05-05

申请人： Juanita N. KURTIN ,  Matthew J. CARILLO ,  Steven M. HUGHES ,  Brian THEOBALD ,  Oun-Ho PARK ,  Georgeta MASSON

发明人： Juanita N. KURTIN ,  Matthew J. CARILLO ,  Steven M. HUGHES ,  Brian THEOBALD ,  Oun-Ho PARK ,  Georgeta MASSON

IPC分类号： H01L33/50 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/06 ,  B01J13/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628 ,  H01L33/002 ,  H01L33/005 ,  H01L33/04 ,  H01L33/502

摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

摘要翻译： 描述了具有纳米晶核和对应的纳米晶体壳和绝缘体涂层的半导体结构。 在一个示例中，半导体结构包括由第一半导体材料构成并且具有但不包括1.0和2.0之间的纵横比的各向异性纳米晶核。 半导体结构还包括由至少部分地围绕各向异性纳米晶核的第二不同的半导体材料组成的纳米晶体壳。 绝缘体层封装纳米晶体壳和各向异性纳米晶核。

公开(公告)号：US20130112942A1

公开(公告)日：2013-05-09

申请号：US13485762

申请日：2012-05-31

申请人： Juanita Kurtin ,  Matthew J. Carillo ,  Steven M. Hughes ,  Brian Theobald ,  Colin Reese ,  Oun-Ho Park ,  Georgeta Masson

发明人： Juanita Kurtin ,  Matthew J. Carillo ,  Steven M. Hughes ,  Brian Theobald ,  Colin Reese ,  Oun-Ho Park ,  Georgeta Masson

IPC分类号： H01L33/06

CPC分类号： H01L33/502 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/005 ,  H01L33/06 ,  H01L33/56 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0083 ,  H05K999/99 ,  Y10S977/744 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/89 ,  Y10S977/95

摘要： Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.

摘要翻译： 描述了具有嵌入矩阵中的半导体结构的复合材料。 在一个实例中，复合材料包括基体材料。 多个半导体结构嵌入基体材料中。 每个半导体结构包括由第一半导体材料构成并具有但不包括1.0和2.0之间的纵横比的各向异性纳米晶核。 每个半导体结构还包括由至少部分地围绕各向异性纳米晶核的第二不同的半导体材料组成的纳米晶体壳。 绝缘体层封装每个纳米晶体壳和各向异性纳米晶核心配对。

公开(公告)号：US20070037042A1

公开(公告)日：2007-02-15

申请号：US11504222

申请日：2006-08-14

申请人： Siyu Ye ,  Paul Beattie ,  Stephen Campbell ,  David Wilkinson ,  Brian Theobald ,  David Thompsett

发明人： Siyu Ye ,  Paul Beattie ,  Stephen Campbell ,  David Wilkinson ,  Brian Theobald ,  David Thompsett

IPC分类号： H01M4/96 ,  H01M4/90 ,  H01M4/92 ,  H01M4/88

CPC分类号： H01M4/8807 ,  H01M4/8605 ,  H01M4/8835 ,  H01M4/9016 ,  H01M4/9083 ,  H01M4/92 ,  H01M4/921 ,  H01M8/1004

摘要： In a solid polymer fuel cell series, various circumstances can result in a fuel cell being driven into voltage reversal. For instance, cell voltage reversal can occur if that cell receives an inadequate supply of fuel. In order to pass current, reactions other than fuel oxidation can take place at the fuel cell anode, including water electrolysis and oxidation of anode components. The latter can result in significant degradation of the anode, particularly if the anode employs a carbon black supported catalyst. Such fuel cells can be made substantially more tolerant to cell reversal by using certain anodes employing both a higher catalyst loading or coverage on a corrosion-resistant support and by incorporating, in addition to the typical electrocatalyst for promoting fuel oxidation, certain unsupported catalyst compositions to promote the water electrolysis reaction.

摘要翻译： 在固体聚合物燃料电池系列中，各种情况可导致燃料电池被驱动进入电压反转。 例如，如果该电池接收到不足的燃料供应，则可能发生电池电压反转。 为了通过电流，燃料氧化以外的反应可以在燃料电池阳极发生，包括水电解和阳极组分的氧化。 后者可导致阳极的显着降解，特别是如果阳极采用负载炭黑的催化剂。 这样的燃料电池可以通过使用在耐腐蚀载体上使用较高催化剂负载量或覆盖率的某些阳极，并且除了用于促进燃料氧化的典型电催化剂之外，还将某些未负载的催化剂组合物掺入到 促进水电解反应。

公开(公告)号：US20160268483A1

公开(公告)日：2016-09-15

申请号：US15064491

申请日：2016-03-08

申请人： Brian Theobald ,  Matthew Bertram ,  Weiwen Zhao ,  Juanita N. Kurtin ,  Norbert Puetz

发明人： Brian Theobald ,  Matthew Bertram ,  Weiwen Zhao ,  Juanita N. Kurtin ,  Norbert Puetz

IPC分类号： H01L33/50 ,  H01L33/56

CPC分类号： H01L33/502 ,  B82Y20/00 ,  B82Y40/00 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/893 ,  Y10S977/95

摘要： Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

摘要翻译： 制造半导体结构，包括从第一半导体材料形成纳米晶核，从至少部分地围绕纳米晶核的第二不同的半导体材料形成纳米晶体壳，其中纳米晶核和纳米晶体壳形成量子点。 制造还涉及形成封装量子点的绝缘体层以产生涂覆的量子点，并且使用原子层沉积（ALD）工艺在涂覆的量子点上形成额外的绝缘体层。

公开(公告)号：US20150221838A1

公开(公告)日：2015-08-06

申请号：US14685570

申请日：2015-04-13

申请人： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

发明人： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

IPC分类号： H01L33/56 ,  H01L33/50 ,  C09K11/02 ,  C09K11/88 ,  H01L33/06 ,  H01L33/00

CPC分类号： H01L33/502 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/005 ,  H01L33/06 ,  H01L33/56 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0083 ,  Y10S977/744 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/89 ,  Y10S977/95

摘要： Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.

摘要翻译： 描述了具有嵌入矩阵中的半导体结构的复合材料。 在一个实例中，复合材料包括基体材料。 多个半导体结构嵌入基体材料中。 每个半导体结构包括由第一半导体材料组成的各向异性纳米晶核。 每个半导体结构还包括由至少部分地围绕各向异性纳米晶核的第二不同的半导体材料组成的纳米晶体壳。 绝缘体层封装每个纳米晶体壳和各向异性纳米晶核心配对。