公开(公告)号：US20070208395A1

公开(公告)日：2007-09-06

申请号：US11686121

申请日：2007-03-14

Applicant: Norbert Leclerc ,  Brendan Moran ,  James Flom ,  Michael Gertner ,  Jonathan Podmore ,  Michael Rode ,  John Crowe ,  Erica Rogers

Inventor： Norbert Leclerc ,  Brendan Moran ,  James Flom ,  Michael Gertner ,  Jonathan Podmore ,  Michael Rode ,  John Crowe ,  Erica Rogers

IPC: A61N5/06

CPC classification number: A61N5/0616 ,  A61B2017/00026 ,  A61B2017/00057 ,  A61B2018/00642 ,  A61B2018/00702 ,  A61B2018/00785 ,  A61N5/062 ,  A61N2005/007 ,  A61N2005/0628 ,  A61N2005/063 ,  A61N2005/0645 ,  A61N2005/0652

Abstract: A method and apparatus is described for treating a target body surface using a radiation applicator. The therapeutic treatment apparatus adapted to conform to a patients body. The treatment apparatus comprises a plurality of light sources coupled with a flexible substrate, a light integrator in at least a portion of the optical path between the light source and the patient's body surface, a power supply, and a controller.

Abstract translation: 描述了使用辐射施加器来治疗目标体表的方法和装置。 该治疗设备适于符合患者身体。 处理装置包括与柔性基板耦合的多个光源，在光源和患者体表之间的光路的至少一部分中的光积分器，电源和控制器。

公开(公告)号：US20130248913A1

公开(公告)日：2013-09-26

申请号：US13878782

申请日：2011-10-07

Applicant: Brendan Moran ,  Jeffrey Kmetec ,  Iain Black ,  Frederic Diana ,  Serge Laurent Rudaz ,  Li Zhang

Inventor： Brendan Moran ,  Jeffrey Kmetec ,  Iain Black ,  Frederic Diana ,  Serge Laurent Rudaz ,  Li Zhang

IPC: H01L33/60 ,  H01L33/50

CPC classification number: H01L33/60 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A submount for a light emitting stack includes a substrate and a metallization layer having circuit traces and a planar dielectric layer that fills regions between the circuit traces. The planar dielectric layer serves to minimize the amount of light lost/absorbed by the substrate and preferably reflects the internally reflected light back toward the desired light output element. To facilitate efficient manufacture, a dielectric paste is applied over the metallized layer, then planed to expose at least portions of the metal conductors for the subsequent coupling to the light emitting stack. Pedestal elements are preferably provided at select locations on the circuit traces to facilitate this coupling while allowing the remainder of the circuit traces to be covered with the dielectric layer.

Abstract translation: 用于发光堆叠的基座包括衬底和具有电路迹线的金属化层和填充电路迹线之间的区域的平面介电层。 平面介电层用于使由衬底损失/吸收的光的量最小化，并且优选地将内部反射的光反射回所需的光输出元件。 为了促进有效的制造，将电介质浆料施加在金属化层上，然后设计成露出至少部分金属导体，以便随后与发光堆叠耦合。 优选地，在电路迹线上的选择位置设置基座元件以促进该耦合，同时允许电路迹线的其余部分被电介质层覆盖。

公开(公告)号：US09040332B2

公开(公告)日：2015-05-26

申请号：US13878782

申请日：2011-10-07

Applicant: Brendan Moran ,  Jeffrey Kmetec ,  Iain Black ,  Frederic Diana ,  Serge Laurent Rudaz ,  Li Zhang

Inventor： Brendan Moran ,  Jeffrey Kmetec ,  Iain Black ,  Frederic Diana ,  Serge Laurent Rudaz ,  Li Zhang

IPC: H01L33/08 ,  H01L33/60 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/60 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A submount for a light emitting stack includes a substrate and a metallization layer having circuit traces and a planar dielectric layer that fills regions between the circuit traces. The planar dielectric layer serves to minimize the amount of light lost/absorbed by the substrate and preferably reflects the internally reflected light back toward the desired light output element. To facilitate efficient manufacture, a dielectric paste is applied over the metallized layer, then planed to expose at least portions of the metal conductors for the subsequent coupling to the light emitting stack. Pedestal elements are preferably provided at select locations on the circuit traces to facilitate this coupling while allowing the remainder of the circuit traces to be covered with the dielectric layer.

Abstract translation: 用于发光堆叠的基座包括衬底和具有电路迹线的金属化层和填充电路迹线之间的区域的平面介电层。 平面介电层用于使由衬底损失/吸收的光的量最小化，并且优选地将内部反射的光反射回所需的光输出元件。 为了促进有效的制造，将电介质浆料施加在金属化层上，然后设计成露出至少部分金属导体，以便随后与发光堆叠耦合。 优选地，在电路迹线上的选择位置设置基座元件以促进该耦合，同时允许电路迹线的其余部分被电介质层覆盖。

公开(公告)号：US20080102610A1

公开(公告)日：2008-05-01

申请号：US11855785

申请日：2007-09-14

Applicant: Hugues Marchand ,  Brendan Moran

Inventor： Hugues Marchand ,  Brendan Moran

IPC: H01L21/36

CPC classification number: H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

Abstract translation: 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。