公开(公告)号：US5648321A

公开(公告)日：1997-07-15

申请号：US120984

申请日：1993-09-13

申请人： Johannes Georg Bednorz ,  Andrei Catana ,  Jean Pierre Locquet ,  Erich Maechler ,  Carl Alexander Mueller

发明人： Johannes Georg Bednorz ,  Andrei Catana ,  Jean Pierre Locquet ,  Erich Maechler ,  Carl Alexander Mueller

IPC分类号： C23C14/06 ,  C23C14/08 ,  C30B29/22 ,  H01L39/12 ,  H01L39/24 ,  B05D5/12 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L39/2422 ,  H01L39/126 ,  Y10S505/729 ,  Y10S505/731 ,  Y10S505/732 ,  Y10S505/742

摘要： Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.

摘要翻译： 描述了通过在衬底（多层沉积）上周期性地沉积（DEP）由不同基底材料组成的多个阻挡层来制造薄膜的方法，其中层（LT）的厚度被限制为1至20个单层和沉积 并且在大致恒温下完成薄膜的结晶，而不进行单独的退火步骤。 该方法可用于生产高Tc超导体的薄膜。 它允许更好地控制具有较大单位电池的三元或更高级化合物的晶体生长。