-
公开(公告)号:US11134684B2
公开(公告)日:2021-10-05
申请号:US15163285
申请日:2016-05-24
IPC分类号: A01N43/40 , C12Q1/18 , C08F220/28 , C08F226/06 , C08F226/08
摘要: A bactericidal polymeric composition includes a hydrophilic first comonomer copolymerized to a second comonomer to produce a polymeric composition that is more hydrophilic or more bactericidal in an aqueous solution than either of the comonomers alone. Methods for identifying bactericidal polymers, methods for rendering materials bactericidal, and methods for using bactericidal compositions to kill or reduce bacterial growth are also described. Applications for the inventive compositions include their use in catheters, stents, medical devices, contact lenses; root canal fillers; and/or wound dressings.
-
公开(公告)号:US10316431B2
公开(公告)日:2019-06-11
申请号:US14918474
申请日:2015-10-20
发明人: Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号: C30B29/40 , H01L29/20 , C30B7/10 , B28D5/04 , H01L21/02 , C30B29/64 , C30B25/20 , H01L29/04 , H01L29/32 , C30B33/06
摘要: The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.
-
公开(公告)号:US10161059B2
公开(公告)日:2018-12-25
申请号:US14720815
申请日:2015-05-24
发明人: Tadao Hashimoto , Edward Letts
IPC分类号: C30B25/02 , C30B23/02 , C30B7/10 , H01L29/20 , H01L29/32 , C30B23/06 , C30B25/20 , C30B29/66 , C30B29/64 , C30B9/10 , C30B29/40
摘要: In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≤x1≤1, 0≤x1+y1≤1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≤x2≤1, 0≤x2+y2≤1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.
-
公开(公告)号:US09985102B2
公开(公告)日:2018-05-29
申请号:US14192715
申请日:2014-02-27
发明人: Edward Letts , Tadao Hashimoto , Masanori Ikari
CPC分类号: H01L29/2003 , C30B7/10 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0254
摘要: The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.
-
公开(公告)号:US09834863B2
公开(公告)日:2017-12-05
申请号:US14598982
申请日:2015-01-16
发明人: Tadao Hashimoto , Edward Letts
CPC分类号: C30B29/403 , C30B7/105
摘要: Bulk crystal of group III nitride having thickness greater than 1 mm with improved crystal quality, reduced lattice bowing and/or reduced crack density and methods of making. Bulk crystal has a seed crystal, a first crystalline portion grown on the first side of the seed crystal and a second crystalline portion grown on the second side of the seed crystal. Either or both crystalline portions have an electron concentration and/or an oxygen concentration similar to the seed crystal.The bulk crystal can have an additional seed crystal, with common faces (e.g. same polarity, same crystal plane) of seed crystals joined so that a first crystalline part grows on the first face of the first seed crystal and a second crystalline part grows on the first face of the second seed crystal. Each crystalline part's electron concentration and/or oxygen concentration may be similar to its corresponding seed crystal.
-
6.
公开(公告)号:US09783910B2
公开(公告)日:2017-10-10
申请号:US15194350
申请日:2016-06-27
发明人: Tadao Hashimoto
CPC分类号: C30B7/105 , C01B21/0632 , C30B29/406 , H01L29/2003 , Y02P20/544
摘要: Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.
-
公开(公告)号:US09754782B2
公开(公告)日:2017-09-05
申请号:US14959476
申请日:2015-12-04
发明人: Tadao Hashimoto
IPC分类号: H01L29/20 , H01L29/04 , H01L21/02 , H01L21/78 , H01L21/324 , H01L21/304
CPC分类号: H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02634 , H01L21/304 , H01L21/3245 , H01L21/78 , H01L29/045 , H01L29/2003
摘要: Group III nitride substrate having a first side of nonpolar or semipolar plane and a second side has more than one stripe of metal buried, wherein the stripes are perpendicular to group III nitride's c-axis. More than 90% of stacking faults exist over metal stripes. Second side may expose a nonpolar or semipolar plane. Also disclosed is a group III nitride substrate having a first side of nonpolar or semipolar plane and a second side with exposed nonpolar or semipolar plane. The substrate contains bundles of stacking faults with spacing larger than 1 mm. The invention also provides methods of fabricating the group III nitride substrates above.
-
公开(公告)号:US09670594B2
公开(公告)日:2017-06-06
申请号:US14957536
申请日:2015-12-02
发明人: Tadao Hashimoto
CPC分类号: C30B7/105 , C01B21/0632 , C01P2002/76 , C01P2004/60 , C30B25/02 , C30B25/16 , C30B29/406 , C30B29/68 , H01L29/2003 , Y02P20/544
摘要: In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.
-
公开(公告)号:US09567108B2
公开(公告)日:2017-02-14
申请号:US14659572
申请日:2015-03-16
申请人: QUICKLAUNCH, INC.
摘要: A gas gun launcher has a pump tube and a launch tube with a first end of the launch tube slidably inserted into a second end of the pump tube. The pump tube may hold a heat exchanger to heat a light gas used to launch a vehicle. A sliding seal can be employed to manage recoil and to retain the gas within the launch tube and the pump tube. A fast-closing muffler at the second end of the launch tube can conserve the light gas utilized for launching a vehicle, enabling the light gas to be recycled. A launch tube alignment system is preferably automatic, ensuring the survival of the launch vehicle.
摘要翻译: 气枪发射器具有泵管和发射管,发射管的第一端可滑动地插入泵管的第二端。 泵管可以容纳热交换器以加热用于发射车辆的轻质气体。 可以使用滑动密封件来管理反冲并将气体保持在发射管和泵管内。 发射管第二端的快速关闭消音器可以节省用于发射车辆的轻质气体,从而使轻型气体得以回收利用。 发射管对准系统优选是自动的,确保运载火箭的存活。
-
公开(公告)号:US09567107B2
公开(公告)日:2017-02-14
申请号:US14642720
申请日:2015-03-09
申请人: QUICKLAUNCH, INC.
发明人: Harry E. Cartland
IPC分类号: B64G1/00 , F41F3/04 , F41F1/00 , F41B11/723 , F41A1/02 , F41B11/60 , F41F3/077 , B64G5/00 , F41B11/68 , F42B10/26 , F42B10/66 , F42B14/06 , F42B15/00
CPC分类号: B64G1/002 , B64G5/00 , F41A1/02 , F41B11/60 , F41B11/68 , F41B11/723 , F41F1/00 , F41F3/04 , F41F3/0413 , F41F3/077 , F42B10/26 , F42B10/66 , F42B14/06 , F42B15/00
摘要: A gas gun launcher has a pump tube and a launch tube with a first end of the launch tube slidably inserted into a second end of the pump tube. The pump tube may hold a heat exchanger to heat a light gas used to launch a vehicle. A sliding seal can be employed to manage recoil and to retain the gas within the launch tube and the pump tube. A fast-closing muffler at the second end of the launch tube can conserve the light gas utilized for launching a vehicle, enabling the light gas to be recycled. A launch tube alignment system is preferably automatic, ensuring the survival of the launch vehicle.
-
-
-
-
-
-
-
-
-