公开(公告)号：US10269862B2

公开(公告)日：2019-04-23

申请号：US15702482

申请日：2017-09-12

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen

IPC分类号： H01L27/146

摘要： An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

公开(公告)号：US09954016B2

公开(公告)日：2018-04-24

申请号：US15228282

申请日：2016-08-04

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

摘要： An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.

公开(公告)号：US10157954B2

公开(公告)日：2018-12-18

申请号：US15803591

申请日：2017-11-03

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L27/144 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/105 ,  H02S40/44

摘要： An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

公开(公告)号：US10056415B2

公开(公告)日：2018-08-21

申请号：US15713251

申请日：2017-09-22

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/105 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

摘要： A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

公开(公告)号：US09991411B2

公开(公告)日：2018-06-05

申请号：US15626969

申请日：2017-06-19

申请人： Artilux Corporation

发明人： Szu-Lin Cheng ,  Han-Din Liu ,  Shu-Lu Chen ,  Yun-Chung Na ,  Hui-Wen Chen

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L31/028

CPC分类号： H01L31/1812 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0549 ,  H01L31/107 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547

摘要： Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

公开(公告)号：US10256264B2

公开(公告)日：2019-04-09

申请号：US15712777

申请日：2017-09-22

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

摘要： An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.

公开(公告)号：US09893112B2

公开(公告)日：2018-02-13

申请号：US15248618

申请日：2016-08-26

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L27/144 ,  H01L31/105 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/028

CPC分类号： H01L27/14647 ,  H01L27/1443 ,  H01L27/14652 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/103 ,  H01L31/105 ,  H02S40/44

摘要： An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

公开(公告)号：US10254389B2

公开(公告)日：2019-04-09

申请号：US15338660

申请日：2016-10-31

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01C3/08 ,  G01S7/486 ,  G01S17/10 ,  H01L27/146 ,  H01L29/161 ,  H01L31/103 ,  G01S17/89

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US09786715B2

公开(公告)日：2017-10-10

申请号：US15216924

申请日：2016-07-22

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14689

摘要： An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

公开(公告)号：US10353056B2

公开(公告)日：2019-07-16

申请号：US16146656

申请日：2018-09-28

申请人： Artilux Corporation ,  Artilux Inc.

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01C3/08 ,  G01S7/486 ,  G01S17/10 ,  H01L27/146 ,  H01L29/161 ,  H01L31/103 ,  G01S17/89

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.