Interlocking device for a manual power transmission system
    81.
    发明授权
    Interlocking device for a manual power transmission system 失效
    手动动力传动系统联锁装置

    公开(公告)号:US3939940A

    公开(公告)日:1976-02-24

    申请号:US507880

    申请日:1974-09-20

    IPC分类号: B60R22/48 B60R21/10

    摘要: Herein disclosed is an interlocking device for locking the gear-shift mechanism of an automotive manually operated power transmission system which is cooperative with a vehicle safety arrangement such as a safety belt, the interlocking device comprising a first movable member movable with a suitable movable member forming part of the gear-shift mechanism such as for example the rotatable guide member for the striking rod of the gear-shift mechanism, a second movable member movable into locking engagement with the first movable member and means responsive to complete protective condition of the safety arrangement for holding the second movable member in locking engagement with the first movable member if and when the safety arrangement is left unused or in an incomplete protective condition.

    摘要翻译: 这里公开了一种用于锁定汽车手动动力传动系统的齿轮换档机构的联锁装置,其与诸如安全带的车辆安全装置协作,所述联锁装置包括可移动的合适的可移动部件形成的第一可移动部件 齿轮换档机构的一部分,例如用于换档机构的打击杆的可旋转引导构件,可移动成与第一可移动构件锁定接合的第二可移动构件和响应于安全装置的完整保护状态的装置 用于当所述安全装置不使用或处于不完全的保护状态时,将所述第二可动构件与所述第一可移动构件锁定接合。

    Clutch plate
    84.
    发明授权
    Clutch plate 有权
    离合器板

    公开(公告)号:US09188168B2

    公开(公告)日:2015-11-17

    申请号:US14237457

    申请日:2012-08-24

    摘要: In a clutch plate of an annular shape and a wet type, a plurality of lubrication grooves each taking a U-shape in cross-section are formed on a friction engaging surface on at least one end side. The groove is provided with a groove forming portion crossing the circumferential direction and blunt portions extending along both sides of the groove forming portion and connecting the friction engaging surface with the groove forming portion. Where a straight line passing across one side end of the groove and extending in a radial direction is assumed as a virtual straight line, in a section of the groove taken along a plane that is orthogonal to the virtual straight line and that includes the one side end, the width of the blunt portion on one side is in a range of 0.12 to 0.35 mm, and the depth of the blunt portion is in a range of 25 to 50 μm.

    摘要翻译: 在环形和湿式的离合器板中,在至少一端的摩擦接合表面上形成有各自呈U字形的多个润滑槽。 槽设置有与圆周方向交叉的槽形成部分和沿着槽形成部分的两侧延伸的钝部,并将摩擦接合表面与槽形成部分连接。 在通过槽的一侧端部并且沿径向延伸的直线被假定为虚拟直线,在沿着与虚拟直线正交的平面截取的并且包括一侧的平面的部分中 一边的钝部的宽度在0.12〜0.35mm的范围内,钝部的深度在25〜50μm的范围内。

    Semiconductor substrate manufacturing apparatus
    85.
    发明授权
    Semiconductor substrate manufacturing apparatus 有权
    半导体基板制造装置

    公开(公告)号:US09139933B2

    公开(公告)日:2015-09-22

    申请号:US13187904

    申请日:2011-07-21

    摘要: According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.

    摘要翻译: 根据本实施方式,将用于外延生长的半导体衬底制造装置供给到放置在基座上的晶片,并且在基座的背面设置有加热器。 作为这种外延生长的结果,SiC膜沉积在成膜室中的基座上。 然后将基座移动到单独的室中,并且在外延过程中沉积在基座上的SiC膜被去除。 在去除SiC膜之后,发生感受器的SiC膜的再生。 该半导体衬底制造装置使得可以在外延生长期间去除沉积在基座上的膜,否则会限制制造成品率。

    Manufacturing apparatus and method for semiconductor device
    86.
    发明授权
    Manufacturing apparatus and method for semiconductor device 有权
    半导体器件的制造装置和方法

    公开(公告)号:US09093484B2

    公开(公告)日:2015-07-28

    申请号:US12853107

    申请日:2010-08-09

    摘要: A manufacturing apparatus for a semiconductor device includes: a chamber configured to load a wafer into the chamber; a gas supplying mechanism configured to supply processed gas into the chamber; a gas discharging mechanism configured to discharge the gas from the chamber; a wafer supporting member configured to mount the wafer; a heater including a heater element configured to heat the wafer up to a predetermined temperature and a heater electrode molded integrally with the heater element; an electrode part connected to the heater electrode and configured to applied a voltage to the heater element via the heater electrode; a base configured to fix the electrode part; and a rotational drive control mechanism configured to rotate the wafer; wherein at least a part of a connection portion of the heater electrode and the electrode part is positioned under the upper surface of the base.

    摘要翻译: 一种用于半导体器件的制造装置,包括:被配置为将晶片加载到所述腔室中的腔室; 气体供给机构,其构造成将处理后的气体供给到所述室内; 气体排出机构,其构造成从所述室排出气体; 构造成安装晶片的晶片支撑构件; 加热器,其包括被配置为将晶片加热到预定温度的加热器元件和与所述加热器元件一体模制的加热器电极; 连接到所述加热器电极并且被配置为经由所述加热器电极向所述加热器元件施加电压的电极部分; 基部,被配置为固定所述电极部; 以及旋转驱动控制机构,其构造成使所述晶片旋转; 其中,所述加热器电极和所述电极部的连接部的至少一部分位于所述基部的上表面的下方。

    Light-emitting element, light-emitting device, lighting device, and electronic devices
    88.
    发明授权
    Light-emitting element, light-emitting device, lighting device, and electronic devices 有权
    发光元件,发光装置,照明装置和电子装置

    公开(公告)号:US08809841B2

    公开(公告)日:2014-08-19

    申请号:US13303637

    申请日:2011-11-23

    IPC分类号: H01L51/50

    摘要: A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

    摘要翻译: 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体(电子或空穴) - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙(注意,带隙是指HOMO能级和LUMO能级之间的能量差),其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。

    Process for producing (meth) acrylic acid
    90.
    发明授权
    Process for producing (meth) acrylic acid 有权
    (甲基)丙烯酸的制造方法

    公开(公告)号:US08680330B2

    公开(公告)日:2014-03-25

    申请号:US13147643

    申请日:2010-01-29

    IPC分类号: C07C51/42

    CPC分类号: C07C51/43 C07C57/04

    摘要: A process for producing (meth)acrylic acid of the present invention comprises the steps in the following order: a crystallization step of supplying a cooling medium cooled by a heat source device to a crystallizer to obtain a (meth)acrylic acid crystal from a crude (meth)acrylic acid solution; an adjustment step of returning the cooling medium discharged from the crystallizer to the crystallizer without cooling; a sweating step of supplying a heating medium to the crystallizer to partially melt the (meth)acrylic acid crystal, thereby obtaining a melted liquid, and discharging the melted liquid from the crystallizer; and a melting step of supplying the heating medium to the crystallizer to melt the (meth)acrylic acid crystal, thereby obtaining purified (meth)acrylic acid. According to the present invention, purified (meth)acrylic acid with high purity can be obtained.

    摘要翻译: 制备本发明的(甲基)丙烯酸的方法包括以下顺序的步骤:将由热源装置冷却的冷却介质供给结晶器的结晶步骤,从粗制得到(甲基)丙烯酸晶体 (甲基)丙烯酸溶液; 将结晶器排出的冷却介质返回到结晶器而不冷却的调整步骤; 向所述结晶器供给加热介质以部分熔融所述(甲基)丙烯酸晶体,从而获得熔融液体并从所述结晶器排出熔融液体的出汗步骤; 以及将加热介质供给结晶器以熔融(甲基)丙烯酸晶体,从而获得纯化的(甲基)丙烯酸的熔融步骤。 根据本发明,可以得到高纯度的(甲基)丙烯酸。