公开(公告)号：US996091A

公开(公告)日：1911-06-27

申请号：US1910585546

申请日：1910-10-06

Applicant: JOHNSON MAURICE BERNAYS

Inventor： JOHNSON MAURICE BERNAYS

CPC classification number: H01J19/28

公开(公告)号：US978280A

公开(公告)日：1910-12-13

申请号：US1909531484

申请日：1909-12-06

Applicant: WRAY MFG COMPANY

Inventor： FALWELL WRAY

CPC classification number: H01J19/28

公开(公告)号：US473393A

公开(公告)日：1892-04-19

申请号：US473393D

CPC classification number: H01J19/28

公开(公告)号：US460596A

公开(公告)日：1891-10-06

申请号：US460596D

CPC classification number: H01J19/28

公开(公告)号：US20160049276A1

公开(公告)日：2016-02-18

申请号：US14779082

申请日：2014-02-13

Applicant: SHENZHEN BENCENT ELECTRONICS CO., LTD.

Inventor： Meng Fu

IPC: H01J17/04 ,  H01J9/26 ,  H01J9/02 ,  H01J17/18

CPC classification number: H01J17/04 ,  H01J9/02 ,  H01J9/265 ,  H01J17/183 ,  H01J19/02 ,  H01J19/28 ,  H01J19/54 ,  H01J21/00 ,  H01J21/36

Abstract: Provided is an integrated gas discharge tube. In the integrated gas discharge tube, the structure of the gas discharge tube is regulated into an upper cover and an insulative base, and the internal side surface and the external side surface of the bottom surface of the insulative base are respectively subject to electrode integration, so that the discharge effect of the gas discharge tube is effectively increased and the preparation process and the preparation flow of a multi-terminal-to-ground gas discharge tube are greatly simplified so as to greatly simplify the preparation process and to realize batch production and high integration of the gas discharge tube. Also provided is a preparation method for an integrated gas discharge tube.

Abstract translation: 提供了一种集成的气体放电管。 在集成气体放电管中，气体放电管的结构被调节到上盖和绝缘基底中，并且绝缘基底的底表面的内侧表面和外侧表面分别进行电极整合， 从而大大简化了气体放电管的放电效果，大大简化了多端对地气体放电管的制备过程和制备流程，大大简化了制备过程，实现了批量生产和 气体放电管的高集成度。 还提供了一种集成气体放电管的制备方法。

公开(公告)号：US20150279607A1

公开(公告)日：2015-10-01

申请号：US14558050

申请日：2014-12-02

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Deyuan XIAO

IPC: H01J21/06 ,  H01J19/28 ,  H01J9/385 ,  H01J19/38 ,  H01J9/24 ,  H01J9/14

CPC classification number: H01J21/06 ,  H01J9/148 ,  H01J9/24 ,  H01J9/385 ,  H01J19/28 ,  H01J19/38

Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hallow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

Abstract translation: 半导体器件可以包括以下元件：半导体衬底，位于衬底上的绝缘体，位于绝缘体上的源电极，位于绝缘体上的漏电极，位于源电极和漏电极之间的栅电极， 由栅极电极包围并定位在源极和漏电极之间的中间通道，位于中空通道和栅电极之间的电介质构件，位于栅电极和源电极之间的第一绝缘构件和第二绝缘构件 位于栅电极和漏电极之间。

公开(公告)号：US20130241389A1

公开(公告)日：2013-09-19

申请号：US13420219

申请日：2012-03-14

Applicant: Roger A. KISNER ,  Kofi KORSAH ,  John T. SIMPSON ,  Alexander M. MELIN

Inventor： Roger A. KISNER ,  Kofi KORSAH ,  John T. SIMPSON ,  Alexander M. MELIN

IPC: H01J21/10 ,  H01J9/26 ,  B82Y99/00

CPC classification number: H01J1/3044 ,  B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J19/24 ,  H01J19/28 ,  H01J21/10 ,  H01J2201/30407 ,  H01J2201/3043 ,  H01J2201/30434 ,  H01J2203/0268

Abstract: A field emission device includes a substrate and a plurality of wires embedded in the substrate. The plurality of wires has at least a field emitter cathode wire; a control grid wire array; and a collector anode array. The field emitter cathode wire, control grid wire array, and collector anode array are embedded in and extend through a nonconductive substrate matrix. A method for making a vacuum field emission device is also disclosed.

Abstract translation: 场致发射器件包括衬底和嵌入衬底中的多根电线。 多根导线至少具有场发射极阴极线; 控制网格线阵列; 和集电极阳极阵列。 场发射极阴极线，控制栅格线阵列和集电极阳极阵列嵌入并延伸穿过非导电基片阵列。 还公开了一种制造真空场致发射器件的方法。

公开(公告)号：USRE29390E

公开(公告)日：1977-09-06

申请号：US648309

申请日：1976-01-12

Applicant: Hendrikus Willemina Evers

Inventor： Hendrikus Willemina Evers

IPC: H01J19/28 ,  H01J19/36 ,  H01J19/74

CPC classification number: H01J19/74 ,  H01J19/28 ,  H01J19/36 ,  H01J2893/0013

Abstract: An electronic tube comprises a anode assembled of two inner anode members and an outer anode member. Surface portions of the inner member which are placed against corresponding surface portions of the outer member have a coefficient of thermal radiation of more than 60% of that of the .[.outer member.]. .Iadd.black body .Iaddend.for a temperature of about 500.degree. C.

公开(公告)号：US3866076A

公开(公告)日：1975-02-11

申请号：US41858373

申请日：1973-11-23

Applicant: PHILIPS CORP

Inventor： EVERS HENDRIKUS WILLEMINA

IPC: H01J1/38 ,  H01J19/28 ,  H01J19/74 ,  H01J1/46 ,  H01J21/10

CPC classification number: H01J19/74 ,  H01J19/28 ,  H01J2893/0013

Abstract: An electronic tube comprises a anode assembled of two inner anode members and an outer anode member. Surface portions of the inner member which are placed against corresponding surface portions of the outer member have a coefficient of thermal radiation of more than 60% of that of the outer member for a temperature of about 500*C.

公开(公告)号：US3549930A

公开(公告)日：1970-12-22

申请号：US3549930D

申请日：1968-12-12

Applicant: SIEMENS AG

Inventor： KATZ HELMUT

IPC: H01J19/28 ,  H01J19/30 ,  H01J19/34 ,  H01J23/027 ,  H01J1/38 ,  H01J7/24 ,  H01J23/12

CPC classification number: H01J23/027 ,  H01J19/28 ,  H01J19/30 ,  H01J19/34 ,  H01J2893/0003 ,  H01J2893/0013 ,  H01J2893/0021