公开(公告)号：US20160117812A1

公开(公告)日：2016-04-28

申请号：US14924308

申请日：2015-10-27

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Siddharth Srivastava

IPC: G06T7/00 ,  G06K9/62 ,  G06K9/46

CPC classification number: G06K9/6256 ,  G03F7/70633 ,  G06K9/2018 ,  G06K9/4604 ,  G06K9/6247 ,  G06K9/629 ,  G06T7/0004 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.

Abstract translation: 本文介绍了通过连续光刻过程测量在基底上形成的结构之间的重叠误差的方法和系统。 采用两个覆盖目标，每个具有相反方向的编程偏移量来执行覆盖测量。 覆盖误差是基于零阶散射测量信号测量的，并且从两个不同方位角的每个目标采集散射测量数据。 另外，提出了基于测量的基于图像的训练数据创建基于图像的测量模型的方法和系统。 然后使用经过训练的基于图像的测量模型来从其他晶片收集的测量图像数据直接计算一个或多个感兴趣的参数的值。 本文描述的基于图像的测量的方法和系统适用于计量和检验应用。

公开(公告)号：US20150323316A1

公开(公告)日：2015-11-12

申请号：US14704840

申请日：2015-05-05

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Stilian Ivanov Pandev ,  Jonathan M. Madsen ,  Alexander Kuznetsov ,  Walter Dean Mieher

IPC: G01B11/27 ,  G06N99/00

CPC classification number: G01N21/9501 ,  G01B11/27 ,  G06N20/00

Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.

Abstract translation: 提出了仅基于测量训练数据创建测量模型的方法和系统。 然后使用经过训练的测量模型直接从测量的散射测量数据计算覆盖值。 测量模型直接接收散射信号作为输入，并提供重叠值作为输出。 在一些实施例中，根据设计规则结构的测量确定覆盖误差。 在一些其它实施例中，通过专门的目标结构的测量来确定覆盖误差。 在另一方面，测量模型被训练并用于基于相同或不同的度量目标来测量除叠加之外的附加参数。 在一些实施例中，来自多个目标的测量数据，由多个计量学收集的测量数据或两者都用于建模，训练和测量。 在一些实施例中，优化算法使测量模型构建和训练过程自动化。

公开(公告)号：US20140297211A1

公开(公告)日：2014-10-02

申请号：US14223045

申请日：2014-03-24

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Jonathan M. Madsen

IPC: H01L21/66

CPC classification number: G03F7/70558 ,  G03F7/70641 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.

Abstract translation: 介绍了基于测量训练数据创建测量模型的方法和系统。 训练有素的测量模型用于直接从其他晶圆收集的测量数据中计算过程参数值，结构参数值或两者。 测量模型直接作为输入接收测量数据，并提供过程参数值，结构参数值或两者作为输出。 测量模型可以直接测量工艺参数。 收集来自多个目标的测量数据，用于建模，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。

公开(公告)号：US20140172394A1

公开(公告)日：2014-06-19

申请号：US14107850

申请日：2013-12-16

Applicant: KLA-Tencor Corporation

Inventor： Alexander Kuznetsov ,  Andrei V. Shchegrov ,  Stilian Ivanov Pandev

IPC: G06F17/50

Abstract: Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.

Abstract translation: 基于将基于计量的目标模型与基于过程的目标模型集成在一起的测量模型进行测量的方法和系统。 采用集成测量模型的系统可用于测量一个或多个目标的结构和材料特性，也可用于测量过程参数值。 基于过程的目标模型可以以多种不同的方式与基于度量的目标模型集成。 在一些示例中，基于基于过程的目标模型确定度量模型参数的值的范围的约束。 在其他一些示例中，综合测量模型包括由基于过程的目标模型所约束的基于计量的目标模型。 在一些其他示例中，基于过程模型，根据其他度量模型参数来表示一个或多个计量模型参数。 在其他一些示例中，过程参数被替换为计量模型。