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114 条记录 (耗时 0.026 秒)

    Method and apparatus for docking a mobile information handling system
    74.
    发明授权
    Method and apparatus for docking a mobile information handling system 有权
    用于对接移动信息处理系统的方法和装置

    公开(公告)号：US07471511B2

    公开(公告)日：2008-12-30

    申请号：US11334162

    申请日：2006-01-18

    申请人： Bruce C. Montag ,  Raymond Farrell Dumbeck ,  Huy Phuong Nguyen

    发明人： Bruce C. Montag ,  Raymond Farrell Dumbeck ,  Huy Phuong Nguyen

    IPC分类号： G06F1/16

    CPC分类号： G06F1/1632 ,  G06F1/1601

    摘要： A mobile information handling system (IHS) docking apparatus includes a base having a display device. An IHS docking connector is located on the base. A mobile IHS may be secured to the base and connected to the IHS docking connector in order to utilize the mobile IHS as a conventional desktop IHS while reducing the space and cables required by conventional mobile IHS docking stations.

    摘要翻译： 移动信息处理系统（IHS）对接装置包括具有显示装置的基座。 IHS对接连接器位于基座上。 移动IHS可以固定到基座并连接到IHS对接连接器，以便将移动IHS用作传统的台式IHS，同时减少常规移动IHS坞站所需的空间和电缆。

    Atomic implantation and thermal treatment of a semiconductor layer
    75.
    发明授权
    Atomic implantation and thermal treatment of a semiconductor layer 有权
    半导体层的原子注入和热处理

    公开(公告)号：US07449394B2

    公开(公告)日：2008-11-11

    申请号：US11179713

    申请日：2005-07-11

    申请人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

    发明人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

    IPC分类号： H01L21/46

    CPC分类号： H01L21/76254

    摘要： Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer; bonding the free surface of the second layer to a host wafer; and supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer. Advantageously, the donor wafer includes a SiGe layer, and the co-implantation of atomic species is conducted according to implantation parameters adapted to enable a first species to form the zone of weakness in the SiGe layer, and to enable a second species to provide a concentration peak located beneath the zone of weakness in the donor wafer to thus minimize surface roughness resulting from detachment at the zone of weakness.

    摘要翻译： 描述形成半导体结构的方法。 在一个实施例中，该技术包括提供在第一层上具有第一半导体层和第二半导体层并具有自由表面的施主晶片; 通过第二层的自由表面共同植入两种不同的原子物质，以形成第一层中的弱区; 将第二层的自由表面粘合到主晶片; 并且在弱化区域提供能量以分散包含主晶片，第二层和第一层的一部分的半导体结构。 有利地，施主晶片包括SiGe层，并且根据适于使第一种类形成SiGe层中的弱点区域的植入参数来进行原子物质的共同注入，并且使得第二物质能够提供 浓度峰位于供体晶片中的弱点之下，从而使得在弱化区分离导致的表面粗糙度最小化。

    Framework for corrrelating content on a local network with information on an external network
    77.
    发明申请
    Framework for corrrelating content on a local network with information on an external network 失效
    将本地网络上的内容与外部网络上的信息进行相关的框架

    公开(公告)号：US20080235393A1

    公开(公告)日：2008-09-25

    申请号：US11726340

    申请日：2007-03-21

    申请人： Anugeetha Kunjithapatham ,  Mithun Sheshagiri ,  Phuong Nguyen ,  Priyang Rathod ,  Alan Messer

    发明人： Anugeetha Kunjithapatham ,  Mithun Sheshagiri ,  Phuong Nguyen ,  Priyang Rathod ,  Alan Messer

    IPC分类号： G06F15/16

    CPC分类号： G06F17/30997

    摘要： A correlation system and method implement a framework for correlating content available from a local network with information on an external network. The system identifies information related to content available on the local network of interest to the user and also identifies one or more external sources that contain such related information. Then the system extracts data related to the identified information from the external sources, and determines correlations between the identified information and the data extracted from the external network.

    摘要翻译： 相关系统和方法实现将来自本地网络的内容与外部网络上的信息相关联的框架。 系统识别与用户感兴趣的本地网络上可用的内容相关的信息，并且还识别包含这些相关信息的一个或多个外部源。 然后系统从外部来源提取与识别信息相关的数据，并确定所识别的信息与从外部网络提取的数据之间的相关性。

    Method and apparatus of remote access message differentiation in VPN endpoint routers
    79.
    发明申请
    Method and apparatus of remote access message differentiation in VPN endpoint routers 审中-公开
    VPN端点路由器远程访问消息差异的方法和装置

    公开(公告)号：US20070234418A1

    公开(公告)日：2007-10-04

    申请号：US11396020

    申请日：2006-03-30

    申请人： Yu Song ,  Phuong Nguyen ,  Alan Messer

    发明人： Yu Song ,  Phuong Nguyen ,  Alan Messer

    IPC分类号： G06F15/16

    CPC分类号： H04L12/4641 ,  H04L63/0272 ,  H04L63/164

    摘要： Method and apparatus for remote access message differentiation in VPN endpoint routers enable differentiating local access traffic from remote traffic entering a network through a virtual private network (VPN), by allowing a local network router to treat and tag remote traffic differently from local traffic. Applications, such as HTTP server, benefit from such differentiation in order to respond differently to either remote or local access requests.

    摘要翻译： VPN端点路由器中用于远程访问消息差异化的方法和设备能够通过允许本地网络路由器以不同于本地流量的方式对远程流量进行处理和标记来区分通过虚拟专用网络（VPN）进入网络的远程流量的本地访问流量。 应用程序（如HTTP服务器）受益于这种差异化，以便对远程或本地访问请求做出不同的响应。

    Methods for forming a semiconductor structure
    80.
    发明授权
    Methods for forming a semiconductor structure 有权
    形成半导体结构的方法

    公开(公告)号：US07276428B2

    公开(公告)日：2007-10-02

    申请号：US11059122

    申请日：2005-02-16

    申请人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac

    发明人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac

    IPC分类号： H01L21/46 ,  H01L21/76

    CPC分类号： H01L21/76254

    摘要： Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer, and bonding the free surface of the second layer to a host wafer. The method also includes supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer, conducting a bond strengthening step on the structure after detachment at a temperature of less than about 800° C. to improve the strength of the bond between the second layer and the host wafer, and selectively etching the first layer portion to remove it from the structure and to expose a surface of the second layer. The implanting step includes implantation parameters chosen to minimize surface roughness resulting from detachment at the zone of weakness.

    摘要翻译： 描述形成半导体结构的方法。 在一个实施例中，该技术包括提供在第一层上具有第一半导体层和第二半导体层的施主晶片，并且具有自由表面，通过第二层的自由表面注入原子物质以形成弱区的区域 第一层，并将第二层的自由表面结合到主晶片。 该方法还包括提供能量以在弱化区域分离包括主晶片，第二层和第一层的一部分的半导体结构，在小于约800℃的温度下分离后在结构上进行结合强化步骤 以提高第二层和主晶片之间的结合强度，并且选择性地蚀刻第一层部分以将其从结构上除去并暴露第二层的表面。 植入步骤包括选择的植入参数以最小化由于在弱化区域脱离而导致的表面粗糙度。