公开(公告)号：US08101443B2

公开(公告)日：2012-01-24

申请号：US12961789

申请日：2010-12-07

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00

CPC分类号： H01L33/502 ,  H01L33/0079 ,  H01L2933/0041

摘要： Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.

摘要翻译： 用于从晶片制造LED芯片的方法和使用这些方法制造的器件的方法包括在LED生长晶片上沉积LED外延层以在生长晶片上形成多个LED。 在至少一些多个LED上结合单晶荧光体，使得来自被覆盖的LED的至少一些光通过单晶磷光体并被转换。 然后可以从晶片将LED芯片分离，以提供每个具有所述单晶荧光体的一部分以转换LED光的LED芯片。

公开(公告)号：US07999283B2

公开(公告)日：2011-08-16

申请号：US11818818

申请日：2007-06-14

申请人： Arpan Chakraborty ,  Bernd Keller

发明人： Arpan Chakraborty ,  Bernd Keller

IPC分类号： H01L33/00

CPC分类号： H01L33/56 ,  H01L25/0753 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/0091 ,  Y10T428/2982 ,  H01L2924/00

摘要： A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.

摘要翻译： 一种发光器件，其具有具有散射特征的密封剂，以调整输出分布图的空间发射图案和色温均匀性。 密封剂由具有光散射性质的材料形成。 这些光散射体的浓度在密封剂内和/或密封剂的表面上在空间上变化。 具有高密度散射体的区域被布置在密封剂中以与在源发射角的期望范围内进入密封剂的光相互作用。 通过增加来自特定发射角范围的光将经历至少一个散射事件的概率，可以调节输出光束的强度和色温分布。

公开(公告)号：US20110073881A1

公开(公告)日：2011-03-31

申请号：US12961789

申请日：2010-12-07

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/50

CPC分类号： H01L33/502 ,  H01L33/0079 ,  H01L2933/0041

摘要： Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.

摘要翻译： 用于从晶片制造LED芯片的方法和使用这些方法制造的器件的方法包括在LED生长晶片上沉积LED外延层以在生长晶片上形成多个LED。 在至少一些多个LED上结合单晶荧光体，使得来自被覆盖的LED的至少一些光通过单晶磷光体并被转换。 然后可以从晶片将LED芯片分离，以提供每个具有所述单晶荧光体的一部分以转换LED光的LED芯片。

公开(公告)号：US20110062415A1

公开(公告)日：2011-03-17

申请号：US12861652

申请日：2010-08-23

申请人： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

发明人： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US07769066B2

公开(公告)日：2010-08-03

申请号：US11600604

申请日：2006-11-15

申请人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

发明人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/3406

摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.

摘要翻译： 一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。 在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。 顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。 因此，n型SLS可以以增加的Al百分数生长以增加折射率。 这与其他功能一起允许降低阈值电流和电压操作。

公开(公告)号：US20090256163A1

公开(公告)日：2009-10-15

申请号：US12082444

申请日：2008-04-10

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00

CPC分类号： H01L33/502 ,  H01L33/0079 ,  H01L2933/0041

摘要： Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.

摘要翻译： 用于从晶片制造LED芯片的方法和使用这些方法制造的器件的方法包括在LED生长晶片上沉积LED外延层以在生长晶片上形成多个LED。 在至少一些多个LED上结合单晶荧光体，使得来自被覆盖的LED的至少一些光通过单晶磷光体并被转换。 然后可以从晶片将LED芯片分离，以提供每个具有所述单晶荧光体的一部分以转换LED光的LED芯片。

公开(公告)号：US20090230411A1

公开(公告)日：2009-09-17

申请号：US12419788

申请日：2009-04-07

申请人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

发明人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention discloses a plurality of interdigitated pixels arranged in an array, having a very low series-resistances with improved current spreading and improved heat-sinking. Each pixel is a square with sides of dimension l. The series resistance is minimized by increasing the perimeter of an active region for the pixels. The series resistance is also minimized by shrinking the space between a mesa and n-contact for each pixel.

摘要翻译： 本发明公开了一种排列成阵列的多个交错像素，具有非常低的串联电阻，具有改进的电流扩散和改善的散热。 每个像素是具有尺寸l的边的正方形。 通过增加像素的有源区域的周长来使串联电阻最小化。 串联电阻也通过缩小每个像素的台面和n接触之间的空间来最小化。

公开(公告)号：US20090173958A1

公开(公告)日：2009-07-09

申请号：US11969508

申请日：2008-01-04

申请人： Arpan Chakraborty ,  Bernd Keller

发明人： Arpan Chakraborty ,  Bernd Keller

IPC分类号： H01L33/00

CPC分类号： H01L33/501 ,  H01L33/502 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A light emitting device includes a light emitting die configured to emit light having a first dominant wavelength, and an index matched wavelength conversion structure configured to receive light emitted by the light emitting die. The index matched wavelength conversion structure includes wavelength converting particles having a first index of refraction embedded in a matrix material. The matrix material has a second index of refraction that may be substantially matched to the first index of refraction. The light emitting device may include a graded index layer having an index of refraction that is continuously graded from a first index of refraction in a first region of the graded index layer near the light emitting die to a second index of refraction in the graded index layer away from the light emitting die.

摘要翻译： 发光器件包括配置为发射具有第一主波长的光的发光管芯和被配置为接收由发光管芯发射的光的折射率匹配波长转换结构。 折射率匹配波长转换结构包括具有嵌入在基质材料中的第一折射率的波长转换粒子。 基质材料具有可以基本上与第一折射率匹配的第二折射率。 发光器件可以包括具有折射率的渐变折射率层，所述折射率折射率在发光管芯附近的渐变折射率层的第一区域中从折射率的第一折射率的第一折射率连续分级到渐变折射率层中的第二折射率 远离发光模具。

公开(公告)号：US07518305B2

公开(公告)日：2009-04-14

申请号：US11264794

申请日：2005-11-01

申请人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

发明人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

IPC分类号： H01J1/62

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention discloses a plurality of interdigitated pixels arranged in an array, having a very low series-resistances with improved current spreading and improved heat-sinking. Each pixel is a square with sides of dimension l. The series resistance is minimized by increasing the perimeter of an active region for the pixels. The series resistance is also minimized by shrinking the space between a mesa and n-contact for each pixel.

摘要翻译： 本发明公开了一种排列成阵列的多个交错像素，具有非常低的串联电阻，具有改进的电流扩散和改善的散热。 每个像素是具有尺寸l的边的正方形。 通过增加像素的有源区域的周长来使串联电阻最小化。 串联电阻也通过缩小每个像素的台面和n接触之间的空间来最小化。

公开(公告)号：US20090050911A1

公开(公告)日：2009-02-26

申请号：US11895573

申请日：2007-08-24

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00 ,  B32B5/16

CPC分类号： H01L33/56 ,  H01L25/0753 ,  H01L33/504 ,  H01L33/54 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0091 ,  Y10T428/2991 ,  H01L2924/00

摘要： A radiation emitting device comprising light scattering particles of different sizes that at least partially surround an emitter, improving the spatial color mixing and color uniformity of the device. Multiple sizes of light scattering particles are dispersed in a medium to at least partially surround a single- or multiple-chip polychromatic emitter package. The different sizes of light scattering particles interact with corresponding wavelength ranges of emitted radiation. Thus, radiation emitted over multiple wavelength ranges or sub-ranges can be efficiently scattered to eliminate (or intentionally create) spatially non-uniform color patterns in the output beam.

摘要翻译： 一种辐射发射装置，包括至少部分地围绕发射器的不同尺寸的光散射粒子，改善了该装置的空间色彩混合和颜色均匀性。 多个尺寸的光散射粒子分散在介质中以至少部分地围绕单片或多片式多色发射器封装。 不同尺寸的光散射颗粒与发射辐射的相应波长范围相互作用。 因此，可以有效地散射在多个波长范围或子范围内发射的辐射以消除（或有意地产生）输出光束中的空间不均匀的颜色图案。