公开(公告)号：US07514375B1

公开(公告)日：2009-04-07

申请号：US11500799

申请日：2006-08-08

Applicant: Sunil Shanker ,  Chi-I Lang

Inventor： Sunil Shanker ,  Chi-I Lang

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31608 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76837

Abstract: During bottom filling of high aspect ratio gaps and trenches in an integrated circuit substrate using HDP-CVD, a pulsed HF bias is applied to the substrate. In some embodiments, pulsed HF bias is applied to the substrate during etching operations. The pulsed bias typically has a pulse frequency in a range of about from 500 Hz to 20 kHz and a duty cycle in a range of about from 0.1 to 0.95.

Abstract translation: 在使用HDP-CVD的集成电路衬底中的高纵横比间隙和沟槽的底部填充期间，将脉冲HF偏压施加到衬底。 在一些实施例中，在蚀刻操作期间将脉冲HF偏压施加到衬底。 脉冲偏压通常具有在约500Hz至20kHz的范围内的脉冲频率和约0.1至0.95的范围内的占空比。

公开(公告)号：US20090061644A1

公开(公告)日：2009-03-05

申请号：US12013759

申请日：2008-01-14

Applicant: Tony P. Chiang ,  Sunil Shanker ,  Chi I. Lang

Inventor： Tony P. Chiang ,  Sunil Shanker ,  Chi I. Lang

IPC: H01L21/31 ,  B05C11/00

CPC classification number: C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

Abstract: A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

公开(公告)号：US07211525B1

公开(公告)日：2007-05-01

申请号：US11082369

申请日：2005-03-16

Applicant: Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

Inventor： Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

IPC: H01L21/469 ,  H01L21/31

CPC classification number: H01L21/31612 ,  C23C16/0245 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/76224 ,  H01L21/76837

Abstract: Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.

Abstract translation: 描述了用绝缘膜填充半导体衬底上的间隙的方法。 该方法减少或消除侧壁沉积和顶帽形成。 在电介质膜沉积期间，这些方法还减少或消除了蚀刻步骤的需要。 所述方法包括在沉积介质膜之前用氢等离子体处理半导体衬底。 在一些实施方案中，使用氢处理与高速沉积工艺相结合。