公开(公告)号：US11978728B2

公开(公告)日：2024-05-07

申请号：US17883160

申请日：2022-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyoung Ahn ,  Junhee Choi ,  Kyungwook Hwang ,  Jinjoo Park

IPC: H01L25/13 ,  H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L25/13 ,  H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/505

Abstract: A display device includes a substrate, an emission layer provided on the substrate and a reflective layer provided on the emission layer. The emission layer has an emission region that emits light, the reflective layer has a first opening, the emission region overlaps the first opening in a direction perpendicular to an upper surface of the substrate and a first width of the emission region is smaller than a second width of the first opening.

公开(公告)号：US11916111B2

公开(公告)日：2024-02-27

申请号：US17969420

申请日：2022-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee Choi ,  Joohun Han ,  Vladimir Matias

IPC: H01L21/00 ,  H01L29/16 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/1604 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02428 ,  H01L21/02488 ,  H01L21/02546 ,  H01L21/02617 ,  H01L29/04

Abstract: A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.

公开(公告)号：US20230238484A1

公开(公告)日：2023-07-27

申请号：US17967318

申请日：2022-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghwan Park ,  Joosung Kim ,  Dongchul Shin ,  Junhee Choi

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/20 ,  H01L33/325 ,  H01L33/382 ,  H01L33/0075 ,  H01L27/156

Abstract: Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

公开(公告)号：US11677061B2

公开(公告)日：2023-06-13

申请号：US17742092

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/382 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US11664384B2

公开(公告)日：2023-05-30

申请号：US17219131

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chilhee Chung ,  Junhee Choi ,  Sungwoo Hwang ,  Shinae Jun ,  Deukseok Chung ,  Junseok Cho

IPC: H01L27/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L27/15 ,  H01L33/50 ,  H05B33/28 ,  H04N9/31 ,  H01L33/24 ,  H01L33/18

CPC classification number: H01L27/1214 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/504 ,  H04N9/315 ,  H05B33/28 ,  H01L33/18 ,  H01L33/24

Abstract: Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.

公开(公告)号：US11611027B2

公开(公告)日：2023-03-21

申请号：US17743028

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US20230005985A1

公开(公告)日：2023-01-05

申请号：US17545645

申请日：2021-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junghun Park ,  Eunsung Lee ,  Junhee Choi

IPC: H01L27/15 ,  H01L33/62

Abstract: A display device includes a display layer including a plurality of light-emitting devices and a plurality of switching devices in a one-to-one correspondence with the light-emitting devices, the plurality of light-emitting devices and the plurality of switching devices forming a monolithic structure, and a driving layer, wherein the plurality of light-emitting devices and the plurality of switching devices corresponding to the plurality of light-emitting devices are grouped into pixels and then arranged in the display layer, and the driving layer includes a plurality of driving devices configured to apply at least one driving signal to the display layer.

公开(公告)号：US11527642B2

公开(公告)日：2022-12-13

申请号：US16826926

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L29/778 ,  H01L29/66 ,  H01L27/15 ,  H01L27/12

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US11502218B2

公开(公告)日：2022-11-15

申请号：US16871214

申请日：2020-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Kiho Kong ,  Deukseok Chung

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/50

Abstract: A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.

公开(公告)号：US11430374B2

公开(公告)日：2022-08-30

申请号：US16857362

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.