Nanopillar field-effect and junction transistors
    61.
    发明授权
    Nanopillar field-effect and junction transistors 有权
    纳米柱场效应和结晶体管

    公开(公告)号:US08883645B2

    公开(公告)日:2014-11-11

    申请号:US13941240

    申请日:2013-07-12

    CPC classification number: H01L29/66477 H01L29/0673 H01L29/4232

    Abstract: Methods for fabrication of nanopillar field effect transistors are described. These transistors can have high height-to-width aspect ratios and be CMOS compatible. Silicon nitride may be used as a masking material. These transistors have a variety of applications, for example they can be used for molecular sensing if the nanopillar has a functionalized layer contacted to the gate electrode. The functional layer can bind molecules, causing an electrical signal in the transistor.

    Abstract translation: 描述了纳米柱场效应晶体管的制造方法。 这些晶体管可以具有高的高宽比和CMOS兼容性。 氮化硅可以用作掩模材料。 这些晶体管具有各种应用,例如,如果纳米柱具有与栅电极接触的功能化层,则它们可用于分子感测。 功能层可以结合分子,在晶体管中引起电信号。

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