ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

    公开(公告)号:US20210288082A1

    公开(公告)日:2021-09-16

    申请号:US16316174

    申请日:2018-05-14

    Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a base substrate and a thin film transistor on the base substrate; a light shielding layer is disposed between the thin film transistor and the base substrate, and the light shielding layer includes a light shielding metal layer and, a light reflection adjusting layer which are stacked on the base substrate, the light reflection adjusting layer covers the light shielding metal layer, and a reflectance of the light reflection adjusting layer is lower than a reflectance of the light shielding metal layer.

    THICKNESS MEASURING METHOD AND DEVICE
    65.
    发明申请

    公开(公告)号:US20190094011A1

    公开(公告)日:2019-03-28

    申请号:US16041200

    申请日:2018-07-20

    Abstract: The present disclosure provides a thickness measuring method and device. The thickness measuring method is used for measuring a thickness of a layer to be measured of a light-transmitting sample to be measured and comprising the steps of: placing the sample to be measured between an optical device and a metal layer, the optical device comprising a light incident surface and a light exit surface; adjusting incident light emitted to the light incident surface of the optical device so that an intensity of light exiting the light exit surface of the optical device is less than 10−12 W/m2, so as to obtain optical parameters of the incident light; and calculating a thickness of the layer to be measured according to the optical parameters of the incident light.

    METHOD FOR FABRICATING ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20180374762A1

    公开(公告)日:2018-12-27

    申请号:US15736972

    申请日:2017-06-14

    Abstract: A method for fabricating an array substrate, an array substrate, and a display device are disclosed. The method includes forming a whole layer of opaque film on a substrate; treating the film to form a transparent region and an opaque region in the film, wherein the opaque region corresponds with a channel region of an active layer; and forming a thin film transistor on the film which has been treated. In the method, prior to forming the thin film transistor, the whole layer of opaque film is formed to comprise the transparent region and the opaque region. When other films are deposited on the whole layer of film, no difference in height occurs, and this further avoids various defects due to difference in height.

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