公开(公告)号：US10388224B2

公开(公告)日：2019-08-20

申请号：US15450128

申请日：2017-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyochul Kim ,  Yeonsang Park ,  Kyungsang Cho ,  Weonkyu Koh ,  Younggeun Roh

IPC: H01L33/06 ,  H01S5/02 ,  H01S5/125 ,  G09G3/3258 ,  G01J1/08 ,  G02B27/42 ,  H01L33/44 ,  H01L51/50 ,  H01L51/52 ,  H01L27/32

Abstract: A quantum dot light emitting device includes a grating device which includes a grating region that has a particular grating interval, and a quantum dot layer located above the grating region. The device provides high-purity color light based on a selection of a wavelength band by the grating region in correspondence with a wavelength band of light emitted from the quantum dot layer.