Abstract:
A flexible display and a method of manufacturing the same are disclosed. In one aspect, the flexible display includes a substrate, a gate insulating layer formed over the substrate, an interlayer insulating layer formed over the gate insulating layer, and a trench disposed between the gate and interlayer insulating layers and configured to accommodate a signal line therein.
Abstract:
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.
Abstract:
A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.
Abstract:
A display apparatus includes: a thin film transistor including a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes; a pad electrode including a first pad layer and a second pad layer on the first pad layer; a third insulating layer covering the source electrode and the drain electrode and an end portion of the pad electrode; a pixel electrode including a semi-transmissive electrically conductive layer in an opening in the third insulating layer; a transparent protection layer between the pixel electrode and the first insulating layer; a fourth insulating layer having an opening corresponding to the opening formed in the third insulating layer, the fourth insulating layer covering the end portion of the pad electrode; an emission layer on the pixel electrode; and an opposing electrode on the emission layer.
Abstract:
An organic light-emitting display apparatus includes a thin film transistor including an active layer, gate, source and drain electrodes, a first insulating layer disposed between the active layer and the gate electrode, and a second insulating layer disposed between the gate electrode and the source and drain electrodes; a pad electrode including a first pad layer disposed on the same layer as the source and drain electrodes and a second pad layer disposed on the first pad layer; a third insulating layer covering the source electrode and the drain electrode and an end portion of the pad electrode; a pixel electrode including a semi-transmissive metal layer and disposed in an opening formed in the third insulating layer; and a fourth insulating layer having an opening formed in a location corresponding to an opening formed in the third insulating layer and covering the end portion of the pixel electrode.