Display device
    51.
    发明授权

    公开(公告)号:US10115780B2

    公开(公告)日:2018-10-30

    申请号:US15721353

    申请日:2017-09-29

    Abstract: A display device including a substrate including a first display region having a first width, a second display region having a second width smaller than the first width, a peripheral region at a periphery of the first and second display regions, and a dummy region in the peripheral region, a first pixel in the first display region, a second pixel in the second display region, a first control line connected to the first pixel and extending in the first display region, a second control line connected to the second pixel and extending in the second display region, and a dummy line connected to the second control line in the dummy region, wherein the second control line is at a first conductive layer on a first insulating layer, the dummy line is at a second conductive layer on a second insulating layer on the first conductive layer.

    Display device
    54.
    发明授权

    公开(公告)号:US11929034B2

    公开(公告)日:2024-03-12

    申请号:US17685722

    申请日:2022-03-03

    CPC classification number: G09G3/3275 G09G3/3266 G09G2300/0426

    Abstract: A display device includes a first pixel. The first pixel includes a first light emitting unit electrically connected between a first power line and a second power line. A first driving transistor is electrically connected between the first power line and the first light emitting unit, and controls a current flowing into the first light emitting unit, based on a first data signal from a first data line to a gate electrode. A first initialization transistor is electrically connected between the gate electrode of the first driving transistor and a third power line. A first switching transistor is electrically connected between a first electrode of the first light emitting unit and a first sub-power line. The first light emitting unit includes light emitting elements. The first driving transistor includes a first semiconductor material, and the first initialization transistor includes a second semiconductor material different from the first semiconductor material.

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