Abstract:
An apparatus for use in an optical transceiver module that incorporates an integrated multiplexer/demultiplexer for high speed data transfer applications. One example embodiment includes a transmissive block arranged to interface with a transmit optical port, a receive optical port, and a plurality of optical subassemblies. The transmit optical port may transmit a first multiplexed optical signal and the receive optical port may receive a second multiplexed optical signal. Filters may be positioned between the transmissive block and one or more of the optical subassemblies to transmit signals at predetermined wavelengths while reflecting other signals incident thereon.
Abstract:
A programmable ROM (PROM) architecture includes cascode NMOS transistors with a fuse bit cell that is arrayed, with sleep transistors located in each column of the array that in a standby mode shut down the entire fuse array. A fuse redundancy scheme may be used to repair a defective fuse row.
Abstract:
A glass optical reflective tap is described that optically connects two optical fibers and may tap a portion of the light that is being communicated between the optical fibers. In one embodiment of the invention, the optical filter includes two D-lenses that operate as focusing or collimator lenses. The first D-lens focuses an optical signal onto a tap filter that allows a majority of the light within an optical signal to pass and also reflects a small portion of optical signal light to a reflective port. The second D-lens focuses the passed light into a transmission port of an optical fiber.
Abstract:
A plurality of fuse cells are arranged in an array. One or more fuse cells include a pair of fuse devices to output a pair of voltages, respectively, wherein the pair of fuse devices are redundantly programmed. A sense amplifier is coupled to the plurality of fuse cells to read the pair of voltage outputs from each of the plurality of fuse cells, respectively. A comparator circuit is coupled to the sense amplifier to compare the pair of voltage outputs for each of the plurality of fuse cells and to output the compared result.
Abstract:
A programmable ROM (PROM) architecture includes cascode NMOS transistors with a fuse bit cell that is arrayed, with sleep transistors located in each column of the array that in a standby mode shut down the entire fuse array. A fuse redundancy scheme may be used to repair a defective fuse row.
Abstract:
A package for maintaining alignment of components includes a frame and a beam with the beam attached to the frame and one end of the beam. One or more components are mounted to the beam. The frame and a portion of the beam are separated from each other by a channel which allows portions of the beam to flex substantially independently of the frame when a force is applied to the frame. Thus, the effects resulting from forces applied to the frame are not experienced by the beam, or are at least attenuated, so that the alignment of the components mounted on the beam is substantially preserved.
Abstract:
An optical add/drop patch cord. The optical add/drop patch cord has an optical add/drop component enclosed by a casing. An input fiber is optically coupled to the optical add/drop component and permanently or detachably connected to the casing. A drop fiber is optically coupled to the optical add/drop component and permanently or detachably connected to the casing. An add fiber is optically coupled to the optical add/drop component and permanently connected to the casing. An output fiber is optically coupled to the optical add/drop component and permanently connected to the casing.
Abstract:
A memory and method for accessing data in a memory which uses non redundant-form address decoders is disclosed. Lines in subarrays of the memory are selected using the redundant-form addresses. The least significant bit of the non redundant-form address is used to select between these lines. The compare function of the cache memory is then done with a non redundant-form address.
Abstract:
In some embodiments, the invention includes an integrated circuit including a bitline and a bitline#, wordlines, and memory cells. The memory cells each corresponding to one of the wordlines and each include first and second pass transistors coupled between first and second storage nodes, respectively, and the bitline and bitline#, respectively, the corresponding wordline being coupled to gates of the first and second pass transistors. The memory cells include first and second inverters cross-coupled between the first and second storage nodes, wherein the first and second pass transistors each have a lower threshold voltage than do transistors of the first and second inverters. Wordline voltage control circuitry coupled to the wordlines selectively controls wordline signals on the wordlines. In some embodiments, the wordline voltage control circuitry asserts the wordline signal for a selected wordline corresponding to a memory cell selected to be read and underdrives the wordline signals for the wordlines not corresponding to the selected memory cell.