公开(公告)号：US20090104761A1

公开(公告)日：2009-04-23

申请号：US11875062

申请日：2007-10-19

Applicant: Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

Inventor： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

IPC: H01L21/26 ,  C23C16/513

CPC classification number: H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

Abstract translation: 等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。 响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

公开(公告)号：US20080200015A1

公开(公告)日：2008-08-21

申请号：US11676069

申请日：2007-02-16

Applicant: Timothy Miller ,  Vikram Singh

Inventor： Timothy Miller ,  Vikram Singh

IPC: H01L21/04

CPC classification number: H01L21/2236 ,  H01J37/32412 ,  H01J37/32706

Abstract: A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition impact a surface of the substrate thereby exposing the substrate to a first dose. The first plasma condition transitions to a second plasma condition. The substrate is biased so that ions in the plasma having the second plasma condition impact the surface of the substrate thereby exposing the substrate to a second dose. The first and second plasma conditions are chosen so that the first and second doses combine to achieve a predetermined distribution of dose across at least a portion of the substrate.

Abstract translation: 多级等离子体掺杂衬底的方法包括从处理气体点燃等离子体。 建立第一等离子体条件用于执行第一等离子体掺杂步骤。 衬底被偏置，使得具有第一等离子体状态的等离子体中的离子影响衬底的表面，从而将衬底暴露于第一剂量。 第一等离子体条件转变到第二等离子体条件。 衬底被偏置，使得具有第二等离子体状态的等离子体中的离子冲击衬底的表面，从而将衬底暴露于第二剂量。 选择第一和第二等离子体条件使得第一和第二剂量组合以实现在衬底的至少一部分上的预定剂量分布。

公开(公告)号：US07383233B1

公开(公告)日：2008-06-03

申请号：US09710543

申请日：2000-11-09

Applicant: Vikram Singh ,  Lisa McClung ,  Gilbert C. L. Leong ,  Karl-Heinz Hetfleisch-Wenzel

Inventor： Vikram Singh ,  Lisa McClung ,  Gilbert C. L. Leong ,  Karl-Heinz Hetfleisch-Wenzel

IPC: H04K1/00

CPC classification number: G06Q30/06 ,  G06Q50/188

Abstract: A method for designing an electronic transactions system and forming a proposal for doing business on a global communications network is disclosed. The invention includes reviewing existing direct sales screening processes, creating new processes, integrating new and existing screening processes, determining and implementing legal terms and conditions for electronic transactions and forming electronic media for posting. Additional steps may include identifying possible transactions based on available products and services, approaching subject matter experts to obtain data, preparing electronic templates and filter mechanisms, and presentation of proposed methods. Steps dealing with legal issues include incorporating terms and conditions of sales through the site, preparing agreements for financial institutions to govern electronic payments, and developing exclusion clauses for traditional third party contracts. Key project personnel create content for an interactive site on a global communications network. A system for filtering and collecting payments electronically may also be implemented.

Abstract translation: 公开了一种用于设计电子交易系统并形成在全球通信网络上进行业务的提案的方法。 本发明包括审查现有的直接销售筛选流程，创建新流程，整合新的和现有的筛选流程，确定和实施电子交易的法律条款和条件，形成电子媒体发布。 附加步骤可以包括基于可用的产品和服务识别可能的交易，接近主题专家获取数据，准备电子模板和过滤机制以及提出的方法的呈现。 处理法律问题的步骤包括通过现场纳入销售条款和条件，为金融机构制定协议以管理电子支付，以及制定传统第三方合同的排除条款。 主要项目人员在全球通信网络上为互动网站创建内容。 也可以实现用于电子过滤和收取付款的系统。

公开(公告)号：US20070084564A1

公开(公告)日：2007-04-19

申请号：US11163303

申请日：2005-10-13

Applicant: Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

Inventor： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

IPC: C23F1/00

CPC classification number: H01J37/321 ,  H01J37/32412 ,  H01L21/26513 ,  H01L21/26526 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/66803

Abstract: A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.

Abstract translation: 掺杂装置包括腔室和等离子体源。 等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。 压板位于室中，靠近等离子体源。 压板支撑具有平面和非平面特征的衬底。 选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征 基板的表面。

公开(公告)号：US20050260354A1

公开(公告)日：2005-11-24

申请号：US10850222

申请日：2004-05-20

Applicant: Vikram Singh ,  Atul Gupta ,  Harold Persing ,  Steven Walther ,  Anne Testoni

Inventor： Vikram Singh ,  Atul Gupta ,  Harold Persing ,  Steven Walther ,  Anne Testoni

IPC: H01J37/32 ,  C23C14/00 ,  C23C16/00

CPC classification number: H01J37/32495 ,  H01J37/32412

Abstract: A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.

Abstract translation: 用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源 从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面 通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤 或更多的基材。

公开(公告)号：US20050205212A1

公开(公告)日：2005-09-22

申请号：US10905172

申请日：2004-12-20

Applicant: Vikram Singh ,  Harold Persing ,  Timothy Miller

Inventor： Vikram Singh ,  Harold Persing ,  Timothy Miller

IPC: H01J37/32 ,  C23F1/00

CPC classification number: H01J37/32412

Abstract: A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.

Abstract translation: 等离子体源包括含有工艺气体的腔室。 该室具有室顶部，其包括由在水平方向上延伸的电介质材料形成的第一部分。 腔室顶部的第二部分由在垂直方向上从第一部分延伸高度的电介质材料形成。 腔室顶部的顶部由导电材料形成，该导电材料在水平方向上延伸穿过第二部分的长度。 无线电频率天线位于第一部分和第二部分中的至少一个附近。 射频天线将射频电流引入到腔室中，激发和离子化处理气体，以便在腔室中产生等离子体。

公开(公告)号：US6039836A

公开(公告)日：2000-03-21

申请号：US993791

申请日：1997-12-19

Applicant: Rajinder Dhindsa ,  Vikram Singh ,  Ken Tokunaga

Inventor： Rajinder Dhindsa ,  Vikram Singh ,  Ken Tokunaga

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/50 ,  H05H1/00

CPC classification number: H01J37/32623 ,  H01J37/32642 ,  Y10S156/915

Abstract: An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.

Abstract translation: 改进的聚焦环被配置用于等离子体处理室。 聚焦环被配置为与在等离子体操作期间由射频（RF）功率供电的基板保持卡盘的至少一部分重叠以用作电极。 聚焦环包括在等离子体操作期间暴露于等离子体处理室内的等离子体区域的上表面。 焦点环还包括与基板保持卡盘的部分重叠的卡盘重叠部分，卡盘重叠部分的至少一部分由具有比聚焦环的剩余部分更低的介电常数的第一材料形成。

公开(公告)号：US09123509B2

公开(公告)日：2015-09-01

申请号：US13157005

申请日：2011-06-09

Applicant: George D. Papasouliotis ,  Kamal Hadidi ,  Helen L. Maynard ,  Ludovic Godet ,  Vikram Singh ,  Timothy J. Miller ,  Bernard Lindsay

Inventor： George D. Papasouliotis ,  Kamal Hadidi ,  Helen L. Maynard ,  Ludovic Godet ,  Vikram Singh ,  Timothy J. Miller ,  Bernard Lindsay

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32412 ,  H01J37/3244

Abstract: Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

Abstract translation: 公开了用于等离子体处理衬底的技术。 在一个特定的示例性实施例中，该技术可以通过包括将进料气体接近等离子体源的方法来实现，其中进料气体可以包括第一和第二物质，其中第一和第二物质具有不同的电离能; 向所述等离子体源提供多级RF功率波形，其中所述多级RF功率波形在第一脉冲持续时间期间具有至少第一功率电平，并且在第二脉冲持续时间期间具有第二功率电平，其中所述第二功率电平可以 与第一功率水平不同; 在第一脉冲持续期间电离原料气体的第一种; 在第二脉冲期间电离第二物种; 以及在所述第一脉冲持续时间期间向所述衬底提供偏置。

公开(公告)号：US08664561B2

公开(公告)日：2014-03-04

申请号：US12496080

申请日：2009-07-01

Applicant: Kamal Hadidi ,  Rajesh Dorai ,  Bernard G. Lindsay ,  Vikram Singh ,  George D. Papasouliotis

Inventor： Kamal Hadidi ,  Rajesh Dorai ,  Bernard G. Lindsay ,  Vikram Singh ,  George D. Papasouliotis

IPC: B23K10/00

CPC classification number: C23C14/48 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.

Abstract translation: 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

公开(公告)号：US08603591B2

公开(公告)日：2013-12-10

申请号：US12645638

申请日：2009-12-23

Applicant: Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

IPC: H05H1/24

CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。