公开(公告)号：US20090286336A1

公开(公告)日：2009-11-19

申请号：US12426301

申请日：2009-04-20

Applicant: An-Thung Cho ,  Chia-Tien Peng ,  Yuan-Jun Hsu ,  Ching-Chieh Shih ,  Chien-Sen Weng ,  Kun-Chih Lin ,  Hang-Wei Tseug ,  Ming-Huang Chuang

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Yuan-Jun Hsu ,  Ching-Chieh Shih ,  Chien-Sen Weng ,  Kun-Chih Lin ,  Hang-Wei Tseug ,  Ming-Huang Chuang

IPC: H01L21/28

CPC classification number: H01L27/1214 ,  G02F1/13318 ,  G02F1/136213 ,  G02F2201/58 ,  G09G3/3406 ,  G09G3/3611 ,  G09G2320/0626 ,  G09G2320/066 ,  G09G2330/021 ,  G09G2360/144 ,  H01L27/127 ,  H01L31/103 ,  H01L31/105 ,  H04N5/58 ,  H04N5/66 ,  H04N21/42202

Abstract: A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract translation: 提供了结合光传感器的制造的薄膜晶体管阵列基板的制造方法。 在制造方法中，在透明导电层和用于检测环境光的金属电极之间形成感光电介质层。 由于采用透明导电层作为电极，所以环境光可以通过透明导电层，并将入射光入射到感光电介质层中。 因此，可以扩大光传感器的感测面积，提高感光效率。 此外，光敏电介质层的另一侧可以是金属电极。 金属电极可阻挡背光入射到感光电介质层中，从而降低背景噪声。 还提供了采用上述薄膜晶体管阵列基板的液晶显示面板的制造方法。

公开(公告)号：US20080296581A1

公开(公告)日：2008-12-04

申请号：US11892191

申请日：2007-08-21

Applicant: Chih-Wei Chao ,  Yi-Sheng Cheng ,  Kun-Chih Lin ,  Yi-Wei Chen

Inventor： Chih-Wei Chao ,  Yi-Sheng Cheng ,  Kun-Chih Lin ,  Yi-Wei Chen

IPC: H01L21/00 ,  H01L29/786

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78621

Abstract: A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode.

Abstract translation: 提供了包括至少一个薄膜晶体管，至少一个存储电容器，图案化第一金属层，层间介电层，钝化层和图案化像素电极的像素结构。 存储电容器电连接到薄膜晶体管。 图案化的第一金属层被层间介电层覆盖。 薄膜晶体管和层间电介质层被钝化层覆盖，其中在钝化层中形成一个开口和一部分层间电介质层。 图案化的像素电极形成在钝化层的一部分和层间电介质层的一部分上，并与钝化层的一部分和层间电介质层的一部分接触。 存储电容器包括图案化的第一金属层，位于开口下方的层间介电层的剩余部分和图案化的像素电极。