PLASMA DICING METHOD
    41.
    发明申请

    公开(公告)号:US20210013043A1

    公开(公告)日:2021-01-14

    申请号:US16696513

    申请日:2019-11-26

    Abstract: Provided is a plasma dicing method. The plasma dicing method includes: performing plasma etching on a first surface of a substrate exposed between a plurality of membrane structures; forming a passivation layer on a semiconductor wafer to cover the plurality of membrane structures and at least one trench; performing plasma etching on a second surface of the substrate such that a through hole exposing a portion of the plurality of membrane structures and a dicing lane connected to the trench and having a width less than a width of the through hole are formed at the substrate; and removing the passivation layer and singulating the semiconductor wafer into a plurality of devices including a membrane partially exposed by the through hole.

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