ORGANIC LIGHT EMITTING DIODE DISPLAY
    44.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY 审中-公开
    有机发光二极管显示

    公开(公告)号:US20170033170A1

    公开(公告)日:2017-02-02

    申请号:US15015081

    申请日:2016-02-03

    Abstract: An organic light emitting diode display includes: a first substrate; a switching thin film transistor on the first substrate; a driving thin film transistor on the first substrate; an organic light emitting diode connected to the driving thin film transistor; and a capping layer on the organic light emitting diode, the capping layer including an anisotropic material having a refractive index in a horizontal direction that is greater than a refractive index in a vertical direction.

    Abstract translation: 有机发光二极管显示器包括:第一基板; 在第一基板上的开关薄膜晶体管; 在第一衬底上的驱动薄膜晶体管; 连接到驱动薄膜晶体管的有机发光二极管; 以及有机发光二极管上的覆盖层,所述覆盖层包括在水平方向上具有大于垂直方向的折射率的折射率的各向异性材料。

    Organic light emitting diode
    45.
    发明授权

    公开(公告)号:US12156416B2

    公开(公告)日:2024-11-26

    申请号:US18448840

    申请日:2023-08-11

    Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.

    ORGANIC LIGHT EMITTING DIODE
    46.
    发明申请

    公开(公告)号:US20210336178A1

    公开(公告)日:2021-10-28

    申请号:US17367215

    申请日:2021-07-02

    Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.

    Light emitting diode and display device including the same

    公开(公告)号:US10483327B2

    公开(公告)日:2019-11-19

    申请号:US15858252

    申请日:2017-12-29

    Abstract: A light-emitting diode includes a first electrode, a second electrode overlapping the first electrode, a first emission layer and a second emission layer provided between the first electrode and the second electrode, and a first charge generating layer provided between the first emission layer and the second emission layer, the first charge generating layer including a p-type charge generating layer and an n-type charge generating layer. The n-type charge generating layer may include an organic material and an inorganic material doped to the organic material, and the inorganic material may include a lanthanide metal or an alkali earth metal, and an alkali halide.

    Organic light emitting diode display

    公开(公告)号:US10403851B2

    公开(公告)日:2019-09-03

    申请号:US14985285

    申请日:2015-12-30

    Abstract: An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminum iodide (AlI3), thorium (IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

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