Abstract:
Provided is a vapor deposition apparatus including a deposition unit including a plurality of deposition modules disposed parallel to each other and a substrate mounting unit located below the deposition unit, on which a substrate is mounted. In this case, each of the plurality of deposition modules includes a nozzle configured to selectively inject a raw gas and a purge gas toward the substrate mounting unit, and the nozzle injects the raw gas while the substrate mounting unit is being located below the nozzle.
Abstract:
A method of forming nanocrystals includes loading a substrate into a chamber, applying a first voltage to a first target to form a thin film including a first metal compound on the substrate by sputtering, and applying a second voltage to a second target and forming nanocrystals in the thin film by sputtering.