公开(公告)号：US20220399189A1

公开(公告)日：2022-12-15

申请号：US17346103

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a radio-frequency (RF) generation system. The RF generation system generally includes an RF generator, and a vacuum interrupter configured to selectively decouple the RF generator from a bias electrode of a plasma chamber based on detection of a fault condition associated with operation of the plasma chamber.

公开(公告)号：US20220359161A1

公开(公告)日：2022-11-10

申请号：US17314173

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Krishna Kumar KUTTANNAIR ,  Jie YU ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40

Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

公开(公告)号：US20200321186A1

公开(公告)日：2020-10-08

申请号：US16373254

申请日：2019-04-02

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Yang YANG ,  Kartik RAMASWAMY ,  Manivannan THOTHADRI ,  Yue GUO

IPC: H01J37/063 ,  H01J37/077 ,  H01J37/32

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching. In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. The electrode has an electron emitting surface disposed at a nonparallel angle relative to a major axis of a substrate assembly. The EBRPE apparatus may further comprise a capacitive or inductive coupled plasma generator. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce directional etching of the substrate. During the EBPRE process, the substrate or electrode is actuated through a process volume during the etching.

公开(公告)号：US20180358222A1

公开(公告)日：2018-12-13

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOZHIZAWA ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20

CPC classification number: H01L21/02115 ,  C23C16/272 ,  C23C16/505 ,  C23C16/56 ,  G03F7/70033 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/6831 ,  H01L27/11551 ,  H01L27/11578

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US20160322242A1

公开(公告)日：2016-11-03

申请号：US15144736

申请日：2016-05-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew NGUYEN ,  Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG

IPC: H01L21/67 ,  C23C16/505 ,  H01L21/683 ,  H01J37/32

CPC classification number: C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32715 ,  H01L21/68742 ,  H01L21/68785

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括具有设置在处理室的电介质盖下方的内部处理容积的处理室; 设置在所述处理室中并具有用于支撑衬底的支撑表面的衬底支撑件; 感应线圈，设置在所述电介质盖的上方，以将RF能量感应地耦合到所述内部处理容积中以在所述衬底支撑件上方形成等离子体; 以及耦合到提升机构以将所述第一感应敷料器环定位在所述内部处理容积内的第一感应式施加器环。

公开(公告)号：US20250140541A1

公开(公告)日：2025-05-01

申请号：US18494319

申请日：2023-10-25

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H01L21/66

Abstract: A method of processing a substrate. The method including delivering, by an RF generator, an RF signal to a processing volume of a processing chamber through an RF match including a configurable impedance altering element. Measuring in real-time, an electrical characteristic of the RF signal. Determining in real-time, a target electrical characteristic based upon a comparison between a calibrated electrical characteristic value and the measured electrical characteristic, in which the calibrated electrical characteristic value is selected to achieve at least one desired plasma processing parameter result. Adjusting in real-time, a setting of the configurable impedance altering element of the RF match to achieve the target electrical characteristic and maintaining, the target electrical characteristic by controlling the setting of the configurable impedance altering element of the RF match.

公开(公告)号：US20250006465A1

公开(公告)日：2025-01-02

申请号：US18214745

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Fernando SILVEIRA ,  Imad YOUSIF

IPC: H01J37/32

Abstract: Methods and apparatus for a point of use remote plasma source are provided. In embodiments, a remote plasma apparatus includes: an enclosure surrounding a cavity; a first conductor surrounding a first portion of the enclosure; a second conductor surrounding a second portion of the enclosure, wherein the first portion of the enclosure and the second portion of the enclosure overlap by an overlap amount, and wherein each of the first conductor and the second conductor are circumferentially discontinuous; a dielectric layer disposed between and separating the first conductor and the second conductor; a gas inlet configured to flow a gas into the cavity; and a gas outlet disposed in a bottom of the enclosure and configured to flow the gas out of the cavity.

公开(公告)号：US20240412947A1

公开(公告)日：2024-12-12

申请号：US18207526

申请日：2023-06-08

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

Abstract: Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance coupled between a first terminal and a second terminal of the tuning circuit, wherein the first terminal is coupled to a generator and the second terminal is coupled to a load; a second impedance coupled between the first impedance of the tuning circuit and a reference potential node; and a signal path coupled to the first impedance or the second impedance, the signal path comprising an inductive element and a first switch coupled to the inductive element, wherein a control input of the first switch is coupled to a control input of the tuning circuit configured to receive a control signal associated with a pulsed voltage (PV) waveform.

公开(公告)号：US20240249915A1

公开(公告)日：2024-07-25

申请号：US18628009

申请日：2024-04-05

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/01

CPC classification number: H01J37/32146 ,  H03H7/0115 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

公开(公告)号：US20240094273A1

公开(公告)日：2024-03-21

申请号：US17947675

申请日：2022-09-19

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Jie YU ,  Yang YANG

IPC: G01R29/08 ,  H01J37/32

CPC classification number: G01R29/0871 ,  H01J37/32183 ,  H01J37/32917 ,  H01J2237/24592

Abstract: A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.