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41.发明申请公开(公告)号：US20070054431A1
公开(公告)日：2007-03-08
申请号：US11500334
申请日：2006-08-08
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/2231
摘要： A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the resonator end face is exposed to a plasma atmosphere generated from the gas containing nitrogen gas. When a ratio of nitrogen to gallium in the surface of the resonator end face before the exposure is represented by “a”, an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face before the exposure is represented by “b”, a ratio of nitrogen to gallium in the surface of the resonator end face after the exposure to the first plasma atmosphere is represented by “d”, and an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face after the exposure is represented by “e”, the value “g” that is expressed by g=(b·d)/(a·e) is set to a value that satisfies g≧0.8.
摘要翻译： 具有氮化物半导体层的衬底被切割以形成谐振器端面，在其上形成涂膜以便形成氮化物半导体激光棒。 这被分为氮化物半导体激光元件。 在共振器端面上形成涂膜之前，共振器端面暴露于由含有氮气的气体产生的等离子体气氛中。 当曝光前共振器端面表面的氮与镓的比例由“a”表示时，曝光前共振器端面的表面内的氮与镓的平均值由“ b“，在暴露于第一等离子体气氛之后，共振器端面的表面中的氮与镓的比率由”d“表示，并且从谐振器端的表面的内部的氮与镓的平均值 曝光后的面由“e”表示，由g =（bd）/（ae）表示的值“g”被设定为满足g> = 0.8的值。
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42.发明申请Method and device for driving LED element, illumination apparatus, and display apparatus 失效用于驱动LED元件，照明装置和显示装置的方法和装置公开(公告)号：US20050168564A1
公开(公告)日：2005-08-04
申请号：US11043938
申请日：2005-01-28
CPC分类号： H05B33/0869 , H05B33/0803 , H05B33/0818 , H05B33/086 , H05B33/0863
摘要： A driving method and a driving device are provided for an LED element in which light emitting layers different from each other in light emission wavelength peak, put on each other with a barrier layer being interposed, are sandwiched by a pair of p-type and n-type layers, and color of emitted light from which substantially depends only upon driving current value. The method comprises a driving current value calculation step of obtaining a value for designating a current value corresponding to a desired color of emitted light from the LED element; a driving current generation step of generating a driving current having the current value designated by the value obtained in the driving current value calculation step; and a driving current supply step of supplying the LED element with the driving current generated in the driving current generation step.
摘要翻译： 提供了一种用于LED元件的驱动方法和驱动装置，其中插入有阻挡层的发光波长峰值彼此不同的发光层被夹在一起，由一对p型和n型 型层，以及基本上仅取决于驱动电流值的发射光的颜色。 该方法包括驱动电流值计算步骤，用于获得用于指定与来自LED元件的发射光的期望颜色相对应的电流值的值; 驱动电流产生步骤，产生具有由所述驱动电流值计算步骤中获得的值指定的电流值的驱动电流; 以及向所述LED元件供给在所述驱动电流产生步骤中产生的驱动电流的驱动电流供给步骤。
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43.发明授权公开(公告)号：US08368095B2
公开(公告)日：2013-02-05
申请号：US11638582
申请日：2006-12-14
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/44 , H01S5/028 , H01S5/2036 , H01S5/22
摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
摘要翻译： 提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。
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44.发明申请Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件公开(公告)号：US20120015465A1
公开(公告)日：2012-01-19
申请号：US13200357
申请日：2011-09-23
IPC分类号： H01L33/26
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.
摘要翻译： 本发明的实施例涉及包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜的氮化物半导体发光器件，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。
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45.发明授权Nitride semiconductor laser element and external-cavity semiconductor laser device 有权氮化物半导体激光元件和外腔半导体激光器件公开(公告)号：US07970035B2
公开(公告)日：2011-06-28
申请号：US12406533
申请日：2009-03-18
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0287 , H01S5/0425 , H01S5/141 , H01S5/2215 , H01S5/34333
摘要： Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.
摘要翻译： 公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。 在氮化物半导体激光元件中，在发光部分上形成由氮氧化硅制成的涂膜，并且涂膜对从发光部分发射的激光的反射光的反射率为0.5％以下。
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公开(公告)号：US07940003B2
公开(公告)日：2011-05-10
申请号：US12155978
申请日：2008-06-12
IPC分类号： H05B33/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L2224/48091 , H01L2224/48247 , H01L2924/16152 , H01S5/0021 , H01S5/02212 , H01S5/02216 , H01S5/0282 , H01S5/0286 , H01S5/0287 , H01S5/0683 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/34333 , Y10S362/80 , H01L2924/00014
摘要： The present invention comprises a light absorption film 5 which is formed on the outermost surface of an end surface on the light emitting side of a chip used in a laser device, typically, a laser chip 1 and which absorbs part of the light emitted. By forming this light absorption film 5, the collection and accumulation of pollutants which are caused by reacting with light emitted are curbed.
摘要翻译： 本发明包括光吸收膜5，其形成在激光装置中使用的芯片的发光侧的端面的最外表面上，通常为激光芯片1，并且其吸收部分发光的光。 通过形成该光吸收膜5，抑制由与发出的光反应引起的污染物的收集和积聚。
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47.发明授权公开(公告)号：US07750363B2
公开(公告)日：2010-07-06
申请号：US11543085
申请日：2006-10-05
IPC分类号： H01L29/74
CPC分类号： H01S5/2231 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/34333
摘要： In a nitride semiconductor laser bar including a group III-V nitride semiconductor layer, on the front-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of aluminum oxide is laid. Likewise, on the rear-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of an aluminum oxide/TiO2 multilayer film is laid.
摘要翻译： 在包括III-V族氮化物半导体层的氮化物半导体激光器棒中，在前侧腔端面上铺设氮化铝的分离层，并且在分离层上，氧化铝的端面涂膜为 铺了 同样地，在后侧腔端面上，放置氮化铝的分离层，并且在分离层上还放置有氧化铝/ TiO 2多层膜的端面涂膜。
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48.发明申请NITRIDE SEMICONDUCTOR LASER ELEMENT AND EXTERNAL-CAVITY SEMICONDUCTOR LASER DEVICE 有权氮化物半导体激光元件和外部半导体激光器件公开(公告)号：US20090238229A1
公开(公告)日：2009-09-24
申请号：US12406533
申请日：2009-03-18
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0287 , H01S5/0425 , H01S5/141 , H01S5/2215 , H01S5/34333
摘要： Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.
摘要翻译： 公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。 在氮化物半导体激光元件中，在发光部分上形成由氮氧化硅制成的涂膜，并且涂膜对从发光部分发射的激光的反射光的反射率为0.5％以下。
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49.发明授权Method and device for driving LED element, illumination apparatus, and display apparatus 失效用于驱动LED元件，照明装置和显示装置的方法和装置公开(公告)号：US07573446B2
公开(公告)日：2009-08-11
申请号：US11043938
申请日：2005-01-28
IPC分类号： G09G3/32
CPC分类号： H05B33/0869 , H05B33/0803 , H05B33/0818 , H05B33/086 , H05B33/0863
摘要： A driving method and a driving device are provided for an LED element in which light emitting layers different from each other in light emission wavelength peak, put on each other with a barrier layer being interposed, are sandwiched by a pair of p-type and n-type layers, and color of emitted light from which substantially depends only upon driving current value. The method comprises a driving current value calculation step of obtaining a value for designating a current value corresponding to a desired color of emitted light from the LED element; a driving current generation step of generating a driving current having the current value designated by the value obtained in the driving current value calculation step; and a driving current supply step of supplying the LED element with the driving current generated in the driving current generation step.
摘要翻译： 提供了一种用于LED元件的驱动方法和驱动装置，其中插入有阻挡层的发光波长峰值彼此不同的发光层被夹在一起，由一对p型和n型 型层，以及基本上仅取决于驱动电流值的发射光的颜色。 该方法包括驱动电流值计算步骤，用于获得用于指定与来自LED元件的发射光的期望颜色相对应的电流值的值; 驱动电流产生步骤，产生具有由所述驱动电流值计算步骤中获得的值指定的电流值的驱动电流; 以及向所述LED元件供给在所述驱动电流产生步骤中产生的驱动电流的驱动电流供给步骤。
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公开(公告)号：US20090116528A1
公开(公告)日：2009-05-07
申请号：US12285337
申请日：2008-10-02
IPC分类号： H01S5/04
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/3202
摘要： A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.
摘要翻译： 氮化物半导体激光器件具有通过堆叠由六方氮化物半导体制成的多个氮化物半导体层而形成的多层结构，而多层结构设置有用于引导激光束的波导结构，形成多层结构的氮化物半导体层被堆叠 在与构成氮化物半导体层的六方氮化物半导体的c轴大致垂直的方向上，形成波导结构的侧面的第一空腔面是具有Ga极性的c面，形成另一侧的第二腔面 与第一腔面相对的波导结构的表面是具有N极性的c面，在第一腔面的表面上形成结晶含氮膜，第一腔面的反射率小于 第二腔面的反射率。
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