Abstract:
A method for confirming a request for an association with an organization by a user of a web-based social network is disclosed. In one embodiment, the request includes an e-mail address not controlled by the organization. The request may also be part of an application for membership with the web-based social network. A determination is made whether the request is accepted based at least partially on a specified number of prior requests for association with the organization or being identified as a member of the organization by another user already a member of the organization. The organization may be a high school, a college, a university, a business, a non-profit company, or any other group of people who may desire to associate with each other.
Abstract:
A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
Abstract:
Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract:
An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.