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公开(公告)号：US20200256931A1
公开(公告)日：2020-08-13
申请号：US16742446
申请日：2020-01-14
申请人： TDK-MICRONAS GMBH
摘要： A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.
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公开(公告)号：US10684158B2
公开(公告)日：2020-06-16
申请号：US15498876
申请日：2017-04-27
申请人： TDK-Micronas GmbH
发明人： Philip Herbst , Hans-Joerg Fink
摘要： A system for monitoring a state, for example a filling state of a container, with a first sensor which in operation produces a measured value, and a second sensor which in operation produces a second, discrete measured value. The first measured value and the second measured value are forwarded to an evaluation unit via a common line.
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公开(公告)号：US10598513B2
公开(公告)日：2020-03-24
申请号：US15646357
申请日：2017-07-11
申请人： TDK—Micronas GmbH
发明人： Juergen Huppertz
摘要： A method and system for computing the phase shift or the amplitude of an electromagnetic three-phase system. The method comprises the following steps of: detecting vector values corresponding to an electromagnetic quantity by three sensors, the three sensors delivering signals that are offset from each other substantially by 0°, 120° and 240°; computing changed vector values by logically adjusting one of the detected vector values to a phase of 0°; and iteratively computing the phase shift of the three-phase system using the changed vector values.
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公开(公告)号：US10473733B2
公开(公告)日：2019-11-12
申请号：US15646641
申请日：2017-07-11
申请人： TDK-Micronas GmbH
发明人： Joerg Franke
IPC分类号： G01R33/025 , G01R33/00 , G01R33/07 , H01L43/06
摘要： Magnetic field compensation device having a first bar-shaped flux concentrator and a second bar-shaped flux concentrator, wherein the first flux concentrator and the second flux concentrator are separated from one another in a y-direction, and the longitudinal axis of the first flux concentrator and the longitudinal axis of the second flux concentrator are arranged to be substantially parallel to one another. A control unit is in an operative electrical connection with the magnetic field sensor and the compensating coil, and the control unit is equipped to control the compensating current through the compensating coil using a measured signal from the magnetic field sensor in such a manner that, for an external magnetic field formed in the x-direction at the location of the magnetic field sensor, the magnetic field is substantially compensated.
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公开(公告)号：US10436817B2
公开(公告)日：2019-10-08
申请号：US15429796
申请日：2017-02-10
申请人： TDK-Micronas GmbH
发明人： Timo Kaufmann , Klaus Heberle , Joerg Franke , Oliver Breitwieser
摘要： A test matrix adapter device having a plurality of segments arranged in a plane, the respective segments have line-shaped and column-shaped frame sections, and the segments are connected to one another in a form-fitting manner by the frame sections. Semiconductor receiving devices are arranged within the segments, that each have a plurality of first contact surfaces that are spaced apart from one another. The semiconductor receiving device are form-fittingly connected by webs to the frame sections of an assigned segment. The semiconductor receiving device has a bottom side and a base region at least partially enclosed by a frame, and an outer side. The column-shaped frame sections have projections that have second contact surfaces that are connected by conductor tracks to the first contact surfaces. The semiconductor receiving device adapted to receive a packaged semiconductor component with terminal contacts and to connect the terminal contacts to the first contact surfaces.
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公开(公告)号：US10165686B2
公开(公告)日：2018-12-25
申请号：US14812718
申请日：2015-07-29
申请人： Micronas GmbH
发明人： Joerg Franke , Klaus Heberle , Oliver Breitwieser , Timo Kaufmann
摘要： An electrical component having a first package part of a first plastic compound. The first package part has a first trench-shaped formation. A first semiconductor body with an integrated circuit is disposed in the first trench-shaped formation. At least two traces, which run on an outer side of the first package part, are provided on a surface of the first trench-shaped formation, wherein the at least two traces are connected to the integrated circuit. The first trench-shaped formation is filled at least partially with a filling material of a second plastic compound to cover the first semiconductor body.
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公开(公告)号：US10139255B2
公开(公告)日：2018-11-27
申请号：US14941112
申请日：2015-11-13
申请人： Micronas GmbH
发明人： Thilo Rubehn
摘要： A method for increasing a reliability of transducers having a first IC and a second IC, each has a sensor and a signal output and a signal input and a comparator, and a sensor signal generated as a function of the physical quantity sensed by the relevant sensor is applied to the respective signal outputs. The signal outputs are each connected to a first input of the comparator, and the signal inputs are each connected to a second input of the comparator. The two ICs can be integrated into a common IC package, and the signal output of the first IC is connected to the first input of the comparator on the first IC and to the signal input of the second IC and to a first contact area passing through the IC package.
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公开(公告)号：US20180321330A1
公开(公告)日：2018-11-08
申请号：US15646641
申请日：2017-07-11
申请人： TDK-Micronas GmbH
发明人： Joerg FRANKE
IPC分类号： G01R33/025 , G01R33/00
CPC分类号： G01R33/025 , G01R33/0017 , G01R33/07 , H01L43/065
摘要： Magnetic field compensation device having a first bar-shaped flux concentrator and a second bar-shaped flux concentrator, wherein the first flux concentrator and the second flux concentrator are separated from one another in a y-direction, and the longitudinal axis of the first flux concentrator and the longitudinal axis of the second flux concentrator are arranged to be substantially parallel to one another. A control unit is in an operative electrical connection with the magnetic field sensor and the compensating coil, and the control unit is equipped to control the compensating current through the compensating coil using a measured signal from the magnetic field sensor in such a manner that, for an external magnetic field formed in the x-direction at the location of the magnetic field sensor, the magnetic field is substantially compensated.
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公开(公告)号：US10115889B2
公开(公告)日：2018-10-30
申请号：US15603733
申请日：2017-05-24
发明人： Toshiyuki Koumori , Yoshiyuki Kono , Tomoyuki Takiguchi , Yoshinori Inuzuka , Akitoshi Mizutani , Seiji Nishimoto , Camillo Pilla
摘要： A method for manufacturing semiconductor devices is provided. The method includes bonding a semiconductor element to a first surface of a planar lead frame, clamping a partial area of the lead frame to hold the lead frame and the semiconductor element in molding dies, and covering at least a part of the lead frame and the semiconductor element with a resin member by resin molding which fills the molding dies with resin. A thin-walled portion having a relative small thickness is previously formed on a shortest virtual line connecting a clamp area of the lead frame to an area where the semiconductor element is bonded.
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公开(公告)号：US10103320B2
公开(公告)日：2018-10-16
申请号：US15146498
申请日：2016-05-04
申请人： Micronas GmbH
发明人： Marc Baumann , Thilo Rubehn , Christian Joos , Jochen Stephan
摘要： A component with a magnetic field sensor. The electronic component is located in a semiconductor substrate or on the surface of the semiconductor substrate and is surrounded at least partially, preferably largely, by a trench in the semiconductor substrate. The trench is filled with a filling material.
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