Methods of interconnect for high density 2.5D and 3D integration

    公开(公告)号:US10593638B2

    公开(公告)日:2020-03-17

    申请号:US15473294

    申请日:2017-03-29

    Applicant: Xilinx, Inc.

    Abstract: Methods and apparatus are described for enabling copper-to-copper (Cu—Cu) bonding at reduced temperatures (e.g., at most 200° C.) by significantly reducing Cu oxide formation. These techniques provide for faster cycle time and entail no extraordinary measures (e.g., forming gas). Such techniques may also enable longer queue (Q) or staging times. One example semiconductor structure generally includes a semiconductor layer, an adhesion layer disposed above the semiconductor layer, an anodic metal layer disposed above the adhesion layer, and a cathodic metal layer disposed above the anodic metal layer. An oxidation potential of the anodic metal layer may be greater than an oxidation potential of the cathodic metal layer. Such a semiconductor structure may be utilized in fabricating IC packages implementing 2.5D or 3D integration.

    Chip package assembly with enhanced interconnects and method for fabricating the same

    公开(公告)号:US10403591B2

    公开(公告)日:2019-09-03

    申请号:US15798748

    申请日:2017-10-31

    Applicant: Xilinx, Inc.

    Abstract: An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is provided that includes a first substrate containing first circuitry, a first contact pad, a first pillar, a first pillar protection layer, a second substrate containing second circuitry, and a solder ball disposed on the first pillar and electrically and mechanically coupling the first substrate to the second substrate. The first contact pad is disposed on the first substrate and coupled to the first circuitry. The first pillar electrically disposed over the first contact pad. The first pillar protection layer is hydrophobic to solder and is disposed on a side surface of the first pillar.

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