公开(公告)号：US20190013230A1

公开(公告)日：2019-01-10

申请号：US16028699

申请日：2018-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAGA ,  Yoshiyuki KOBAYASHI ,  Kazuya NAGASEKI

IPC: H01L21/683 ,  H01J37/32 ,  C23C4/134 ,  C23C4/11

Abstract: Disclosed is a method of manufacturing an electrostatic chuck configured to attract a substrate by applying a voltage to a first electrode layer. The method includes forming the first electrode layer on a first resin layer on a base and thermally spraying ceramics or a ceramics-containing material on the first electrode layer. The thermally spraying the ceramic or the ceramics-containing material includes transporting powder of a thermal spray material, introduced into a nozzle from a feeder, by a plasma generation gas and spraying the powder from an opening in a tip end portion of the nozzle, dissociating the sprayed plasma generation gas by electric power of 500 W to 10 kW to generate plasma having a common axis with the nozzle, and forming the powder of the thermal spray material into a liquid phase by the generated plasma to form a film on the first electrode layer.

公开(公告)号：US20130284375A1

公开(公告)日：2013-10-31

申请号：US13930524

申请日：2013-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuyuki NAGAYAMA ,  Naoyuki SATOH ,  Keiichi NAGAKUBO ,  Kazuya NAGASEKI

IPC: H01L21/465

CPC classification number: H01L21/465 ,  C23C16/0227 ,  C23C16/325 ,  C23C16/4418 ,  H01J37/32467 ,  H01J37/32862

Abstract: A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

Abstract translation: 重复使用等离子体处理装置中的消耗部件的方法包括清洁由特定时间段内进行的第一等离子体处理而被SiC腐蚀的消耗部件的表面。 该方法还包括通过CVD在被蚀刻的消耗部件的清洁表面上沉积SiC。 该方法还包括通过使用再制造的可消耗部件对基板上的第二等离子体处理进行第二等离子体处理，对其上沉积有SiC的侵蚀的消耗部件进行加工，从而重新制造具有预定形状的消耗部件。