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公开(公告)号:US20210395611A1
公开(公告)日:2021-12-23
申请号:US17308344
申请日:2021-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kwanghee KIM , Tae Hyung KIM , Hongkyu SEO , Won Sik YOON , Jaeyong LEE , Eun Joo JANG , Oul CHO
Abstract: A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.
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公开(公告)号:US20210226145A1
公开(公告)日:2021-07-22
申请号:US17205015
申请日:2021-03-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dae Young CHUNG , Kwanghee KIM , Hongkyu SEO , Eun Joo JANG , Oul CHO , Tae Hyung KIM , Yuho WON , Hee Jae LEE
Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.
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公开(公告)号:US20210198569A1
公开(公告)日:2021-07-01
申请号:US17203872
申请日:2021-03-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Hyung KIM , Hyun A KANG , Eun Joo JANG , Dae Young CHUNG
Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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公开(公告)号:US20200263083A1
公开(公告)日:2020-08-20
申请号:US16791327
申请日:2020-02-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Hyung KIM , Kwanghee KIM , Eun Joo JANG , Dae Young CHUNG , Sujin PARK
Abstract: Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.
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35.
公开(公告)号:US20200248073A1
公开(公告)日:2020-08-06
申请号:US16851625
申请日:2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeong Hee LEE , Hyun A KANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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公开(公告)号:US20200083470A1
公开(公告)日:2020-03-12
申请号:US16549472
申请日:2019-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dae Young CHUNG , Kwanghee KIM , Hongkyu SEO , Eun Joo JANG , Oul CHO , Tae Hyung KIM , Yuho WON , Hee Jae LEE
Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.
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公开(公告)号:US20200035857A1
公开(公告)日:2020-01-30
申请号:US16442926
申请日:2019-06-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kun Su PARK , Tae Ho KIM , Sung Woo KIM , Chan Su KIM , Tae Hyung KIM , Eun Joo JANG
Abstract: A quantum dot device including a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes an electron-transporting material represented by Chemical Formula 1 and an electron-controlling material capable of decreasing electron mobility of the electron auxiliary layer, and a display device. Zn1-xMxO Chemical Formula 1 In Chemical Formula 1, M and x are the same as described in the detailed description.
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38.
公开(公告)号:US20190326533A1
公开(公告)日:2019-10-24
申请号:US16391692
申请日:2019-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kwanghee KIM , Oul CHO , Chan Su KIM , Tae Hyung KIM , Eun Joo JANG , Moon Gyu HAN
Abstract: A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.
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39.
公开(公告)号:US20190288229A1
公开(公告)日:2019-09-19
申请号:US16351654
申请日:2019-03-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Woo KIM , Chan Su KIM , Tae Ho KIM , Kun Su PARK , Eun Joo JANG , Jin A KIM , Tae Hyung KIM , Jeong Hee LEE
Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.
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40.
公开(公告)号:US20190280233A1
公开(公告)日:2019-09-12
申请号:US16298357
申请日:2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Hyung KIM , Sung Woo KIM , Jin A KIM , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Oul CHO
Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.
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