公开(公告)号：US10777114B2

公开(公告)日：2020-09-15

申请号：US15869835

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Bae Moon ,  Jeongpyo Kim ,  Kiho Kong ,  Jeehwal Kim

IPC: G09G3/20 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3258 ,  H01L27/32

Abstract: In one embodiment, the control integrated circuit includes a gate driver configured to selectively drive a plurality of gate lines associated with pixels in a display panel; a source driver configured to supply data to the display panel; and a controller configured to generate switch control signals for controlling a switch driver of the display panel, the switch driver for selectively supplying the data to a plurality of data lines. The controller is configured to control the gate driver and generate the switch control signals such that the plurality of gate lines are activated non-sequentially, and an order of pixels activated and associated with a same one of the plurality of data lines includes at least two pixels of a same color activated in sequence.

公开(公告)号：US12100340B2

公开(公告)日：2024-09-24

申请号：US18233148

申请日：2023-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

CPC classification number: G09G3/32 ,  H01L27/156 ,  H01L33/10 ,  H01L33/346 ,  G09G2300/0452

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US11990500B2

公开(公告)日：2024-05-21

申请号：US17207105

申请日：2021-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi

IPC: H01L27/15 ,  G09G3/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/156 ,  G09G3/32 ,  H01L33/005 ,  H01L33/38 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.

公开(公告)号：US11677061B2

公开(公告)日：2023-06-13

申请号：US17742092

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/382 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US11611027B2

公开(公告)日：2023-03-21

申请号：US17743028

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US11527642B2

公开(公告)日：2022-12-13

申请号：US16826926

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L29/778 ,  H01L29/66 ,  H01L27/15 ,  H01L27/12

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US11502218B2

公开(公告)日：2022-11-15

申请号：US16871214

申请日：2020-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Kiho Kong ,  Deukseok Chung

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/50

Abstract: A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.

公开(公告)号：US20220278262A1

公开(公告)日：2022-09-01

申请号：US17742092

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee CHOI ,  Jinjoo PARK ,  Joohun HAN

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US11430374B2

公开(公告)日：2022-08-30

申请号：US16857362

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US20220093824A1

公开(公告)日：2022-03-24

申请号：US17480802

申请日：2021-09-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Jinjoo Park ,  Kiho Kong ,  Junghun Park ,  Eunsung Lee

IPC: H01L33/08 ,  H01L33/38 ,  H01L27/15 ,  H01L33/00

Abstract: A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.