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公开(公告)号:US20220173277A1
公开(公告)日:2022-06-02
申请号:US17389127
申请日:2021-07-29
Applicant: Samsung Display Co., LTD.
Inventor: So Young LEE , Dong Uk KIM , Chul Jong YOO , Se Young KIM
IPC: H01L33/44 , H01L33/20 , H01L25/075 , H01L33/00 , H01L25/16
Abstract: A display device, a light-emitting element, and a method of manufacturing a light-emitting element are provided. A display device includes: a first electrode and a second electrode spaced apart from each other; and light-emitting elements between the first electrode and the second electrode, and each of the light-emitting elements includes a first area having a first diameter, a second area having a second diameter greater than the first diameter, a first insulating film surrounding the first area, and a second insulating film on the first insulating film, and the second insulating film surrounds the second area exposed by the first insulating film.
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32.
公开(公告)号:US20220140191A1
公开(公告)日:2022-05-05
申请号:US17365461
申请日:2021-07-01
Applicant: Samsung Display Co., LTD.
Inventor: Young Chul SIM , Hyung Rae CHA , Dong Uk KIM , Sung Ae JANG , Ji Hyun HAM
Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.
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公开(公告)号:US20220085097A1
公开(公告)日:2022-03-17
申请号:US17423290
申请日:2019-12-05
Applicant: Samsung Display Co., LTD.
Inventor: Keun Kyu SONG , Jung Hong MIN , Dae Hyun KIM , Dong Uk KIM , Hyun Min CHO
Abstract: A light-emitting diode includes a first semiconductor region having a first conductive type; a second semiconductor region having a second conductive type; and an active layer disposed between the first semiconductor region and the second semiconductor region and including phosphorus (P). The light-emitting diode has a rod shape, the second semiconductor region includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, which are sequentially stacked, the first semiconductor layer is disposed between the active layer and the second semiconductor layer, and the second semiconductor layer includes a compound represented by AlGaInP and satisfying Equation 1.
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公开(公告)号:US20220029058A1
公开(公告)日:2022-01-27
申请号:US17298445
申请日:2019-05-30
Applicant: Samsung Display Co., Ltd.
Inventor: Dong Uk KIM , Jin Oh KWAG , Keun Kyu SONG , Sung-Chan JO , Hyun Min CHO
IPC: H01L33/38 , H01L25/075 , H01L33/62 , H01L33/24 , H01L33/00
Abstract: A display device may include: a substrate including a display area and a non-display area; and pixels in the display area, and each including sub-pixels. Each sub-pixel may include a pixel circuit layer, and a display element layer including at least one light emitting element. The display element layer may include: a first electrode on the pixel circuit layer; a second electrode on the first electrode and electrically insulated from the first electrode; the light emitting element including a first end portion coupled to the first electrode and a second end portion coupled to the second electrode, and between the first electrode and the second electrode; an intermediate layer enclosing at least one area of the light emitting element, and on the first electrode; a connection line electrically connected to the second electrode. The second electrode may be on the intermediate layer.
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公开(公告)号:US20210167050A1
公开(公告)日:2021-06-03
申请号:US17250633
申请日:2019-01-03
Applicant: Samsung Display Co., Ltd.
Inventor: Hyun Min CHO , Dae Hyun KIM , Dong Uk KIM , Jung Hong MIN , Seung A LEE , Hyung Rae CHA
IPC: H01L25/075 , H01L27/12 , H01L33/00 , H01L33/22 , H01L33/62
Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.
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公开(公告)号:US20200043976A1
公开(公告)日:2020-02-06
申请号:US16275794
申请日:2019-02-14
Applicant: Samsung Display Co., Ltd.
Inventor: Dong Uk KIM , Hyun Min CHO , Keun Kyu SONG , Dae Hyun KIM , Jung Hong MIN , Seung A. LEE , Hyung Rae CHA
Abstract: A display device includes a first pixel and a second pixel; a light emitting layer; a color conversion layer on the light emitting layer; and a color filter layer on the color conversion layer, the light emitting layer including one or more light emitting elements in the first pixel and the second pixel, the color conversion layer including a first color conversion layer in the first pixel and a second color conversion layer in the second pixel. The color filter layer includes a first color filter layer in the first pixel and a second color filter layer in the second pixel, the light emitting elements capable of emitting a first light having a first wavelength, each of the first color conversion layer and the second color conversion layer including first color conversion particles and second color conversion particles.
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公开(公告)号:US20170343855A1
公开(公告)日:2017-11-30
申请号:US15399361
申请日:2017-01-05
Applicant: Samsung Display Co., Ltd.
Inventor: Kang Soon HAN , Yun Jong YEO , Dong Uk KIM , Hyun Min CHO , Hyung Bin CHO , Ji Hun KIM , Sung Won CHO , Young Min KIM , Hae Il PARK , Seung Jin Baek , Dae Young LEE , Kun Hee JO , Gug Rae JO
IPC: G02F1/1335
CPC classification number: G02F1/133536 , G02F1/133528 , G02F1/133617 , G02F1/133621 , G02F2001/133548 , G02F2001/133565 , G02F2001/133614 , G02F2201/121 , G02F2202/108 , G02F2202/36 , G02F2203/05 , G02F2203/34
Abstract: A display device includes a first substrate, a first wavelength conversion layer and a second wavelength conversion layer disposed on the first substrate and spaced apart from each other, and a polarization layer disposed on the first wavelength conversion layer and the second wavelength conversion layer, the polarization layer including a reflection portion and a transmitting portion, in which the reflection portion overlaps a gap formed between the first wavelength conversion layer and the second wavelength conversion layer.
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38.
公开(公告)号:US20240038738A1
公开(公告)日:2024-02-01
申请号:US18483444
申请日:2023-10-09
Applicant: Samsung Display Co., LTD.
Inventor: Hyun Min CHO , Dae Hyun KIM , Dong Uk KIM , Jung Hong MIN , Seung A LEE , Hyung Rae CHA
IPC: H01L25/075 , H01L33/00 , H01L27/12 , H01L33/22 , H01L33/62
CPC classification number: H01L25/0753 , H01L33/0093 , H01L27/1214 , H01L33/22 , H01L33/62 , H01L2933/0066
Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.
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公开(公告)号:US20240032380A1
公开(公告)日:2024-01-25
申请号:US18120077
申请日:2023-03-10
Applicant: Samsung Display Co., LTD.
Inventor: Hyun Ho KIM , Dong Uk KIM , Hoon Gi LEE
IPC: H10K59/60 , H10K59/122 , H10K59/80
CPC classification number: H10K59/60 , H10K59/122 , H10K59/87
Abstract: A display device includes a substrate, a first planarization layer disposed on a surface of the substrate, a second planarization layer disposed on a surface of the first planarization layer, a light-emitting element including a pixel electrode disposed on the surface of the second planarization layer, an emissive layer disposed on a surface of the pixel electrode, and a common electrode disposed on a surface of the emissive layer, a connection electrode disposed on the surface of the first planarization layer and electrically connecting the surface of the first planarization layer with an opposite surface of the first planarization layer through a first contact hole, and a light-absorbing layer disposed on the surface of the first planarization layer and covered by the second planarization layer.
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公开(公告)号:US20230018385A1
公开(公告)日:2023-01-19
申请号:US17675052
申请日:2022-02-18
Applicant: Samsung Display Co., LTD.
Inventor: Hyung Rae CHA , Dong Uk KIM , Dong Kyun SEO , Young Chul SIM
Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element comprising: a light-emitting element core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a nitride insulating film surrounding a side face of the light-emitting element core, a first element insulating film surrounding an outer side face of the nitride insulating film, and a second element insulating film surrounding an outer side face of the first element insulating film, wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.
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