-
公开(公告)号：US20190385862A1
公开(公告)日：2019-12-19
申请号：US16020178
申请日：2018-06-27
Applicant: Mattson Technology, Inc.
Inventor： Michael X. Yang , Shawming Ma
IPC: H01L21/324 , H01L21/67 , C23C16/46 , H01L21/687
Abstract: A method for processing a workpiece is provided. The method can include placing a workpiece on a susceptor disposed within a processing chamber. The method can include performing a multi-cycle thermal treatment process on the workpiece in the processing chamber. The multi-cycle thermal treatment process can include at least two thermal cycles. Each thermal cycle of the at least two thermal cycles can include performing a first treatment on the workpiece at a first temperature; heating a device side surface of the workpiece to a second temperature in less than one second; performing a second treatment on the workpiece at approximately the second temperature; and cooling the workpiece subsequent to performing the second treatment.
-
公开(公告)号：US20180358210A1
公开(公告)日：2018-12-13
申请号：US15888257
申请日：2018-02-05
Applicant: Mattson Technology, Inc.
Inventor： Shawming Ma , Vladimir Nagorny , Dixit V. Desai , Ryan Pakulski
CPC classification number: H01J37/32522 , H01J37/321 , H01J37/32422 , H01J37/32715 , H01J37/32816 , H01J37/32899 , H01J2237/002 , H01L21/67069 , H01L21/67109 , H01L21/67207
Abstract: Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber. The apparatus includes a first pedestal in the processing chamber operable to support a workpiece. The first pedestal can define a first processing station. The plasma processing apparatus can include a second pedestal in the processing chamber operable to support a workpiece. The second pedestal can define a second processing station. The apparatus can include a first plasma chamber disposed above the first processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The apparatus can include a second plasma chamber disposed above the second processing station. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.
-
公开(公告)号：US20180358204A1
公开(公告)日：2018-12-13
申请号：US15892723
申请日：2018-02-09
Applicant: Mattson Technology, Inc.
Inventor： Shawming Ma , Vladimir Nagorny , Dixit V. Desai , Ryan M. Pakulski
CPC classification number: H01J37/3244 , B08B5/00 , G03F7/427 , H01J37/32357 , H01J37/32422
Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus a first gas injection zone configured to inject a process gas into the plasma chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the plasma chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.
-
公开(公告)号：US20240297019A1
公开(公告)日：2024-09-05
申请号：US18651606
申请日：2024-04-30
Inventor： Stephen E. Savas , Shawming Ma
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J37/32119 , H01J37/32697 , H01J37/32715 , H01J37/32899 , H01J2237/3321 , H01J2237/334
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.
-
公开(公告)号：US11508560B2
公开(公告)日：2022-11-22
申请号：US15930910
申请日：2020-05-13
Inventor： Martin L. Zucker , Peter J. Lembesis , Ryan M. Pakulski , Shawming Ma
IPC: H01L21/20 , H01J37/32 , H01L21/203 , H01L21/677 , H01L21/68 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687
Abstract: A focus ring adjustment assembly of a system for processing workpieces under vacuum, where the focus ring may include a lower side having a first surface portion and a second surface portion, the first surface portion being vertically above the second surface portion. The adjustment assembly may include a pin configured to selectively contact the first surface portion of the focus ring, and an actuator operable to move the pin along the vertical direction between an extended position and a retracted position. The extended position of the pin may be associated with the distal end of the pin contacting the first surface of the focus ring and the focus ring being accessible for removal by a workpiece handling robot from the vacuum process chamber.
-
Patent Agency Ranking
公开(公告)号：US20220310359A1
公开(公告)日：2022-09-29
申请号：US17827198
申请日：2022-05-27
Inventor： Stephen E. Savas , Shawming Ma
IPC: H01J37/32
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
-
公开(公告)号：US11264249B2
公开(公告)日：2022-03-01
申请号：US16713281
申请日：2019-12-13
Inventor： Fen Dai , Tinghao Wang , Oliver D. Jan , Moo-Hyun Kim , Shawming Ma , Zhongming Liu
IPC: H01L21/311 , H01L21/033
Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.
-
公开(公告)号：US20210398775A1
公开(公告)日：2021-12-23
申请号：US17387393
申请日：2021-07-28
Inventor： Shawming Ma , Vladimir Nagorny , Dixit V. Desai , Ryan M. Pakulski
Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiments, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber, and a gas injection insert arranged in the plasma chamber having a peripheral portion and a center portion, the center portion extends a vertical distance past the peripheral portion. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece, a first gas injection zone configured to inject a process gas into the process chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the process chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.
-
公开(公告)号：US11201036B2
公开(公告)日：2021-12-14
申请号：US15888257
申请日：2018-02-05
Inventor： Shawming Ma , Vladimir Nagorny , Dixit V. Desai , Ryan Pakulski
Abstract: Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma chamber disposed above the first processing station and a second plasma chamber disposed above the second processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.
-
公开(公告)号：US20210307151A1
公开(公告)日：2021-09-30
申请号：US17346754
申请日：2021-06-14
Inventor： Shuang Meng , Xinliang Lu , Shawming Ma , Hua Chung
Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.
-
-
-
-
-
-
-
-
-
Search Results
61
records
(took 0.018 seconds)
