公开(公告)号：US20110216566A1

公开(公告)日：2011-09-08

申请号：US13034722

申请日：2011-02-25

Applicant: Koichiro KAMATA

Inventor： Koichiro KAMATA

IPC: H02M7/217 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L27/0629 ,  H01L27/0817 ,  H01L27/1225

Abstract: In a rectifier circuit, by using a transistor whose off-state current is small as a so-called diode-connected MOS transistor included in the rectifier circuit, breakdown which is caused when a reverse bias is applied is prevented. Thus, an object is to provide a rectifier circuit whose reliability is increased and rectification efficiency is improved. A gate and a drain of a transistor are both connected to a terminal of the rectifier circuit to which an AC signal is input. In the transistor, an oxide semiconductor is used for a channel formation region and the off-state current at room temperature is less than or equal to 10−20 A/μm, which is equal to 10 zA/μm (z: zepto), when the source-drain voltage is 3.1 V.

Abstract translation: 在整流电路中，通过使用截止电流小的晶体管作为整流电路中所谓的二极管连接的MOS晶体管，可以防止在施加反向偏压时引起的击穿。 因此，目的在于提供一种提高可靠性的整流电路，提高整流效率。 晶体管的栅极和漏极都连接到输入AC信号的整流器电路的端子。 在晶体管中，氧化物半导体用于沟道形成区域，室温下的截止电流小于或等于10-20A /μm，等于10zA /μm（z：zepto）， 当源极 - 漏极电压为3.1V时。

公开(公告)号：US20110121911A1

公开(公告)日：2011-05-26

申请号：US12948225

申请日：2010-11-17

Applicant: Koichiro KAMATA

Inventor： Koichiro KAMATA

IPC: H03C1/00

CPC classification number: H01L29/7869 ,  G06K19/07775 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2223/6677 ,  H03C1/36 ,  H04M2201/04 ,  H04M2201/06

Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.

Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。