Display substrate and preparation method thereof, and display apparatus

    公开(公告)号:US12238973B2

    公开(公告)日:2025-02-25

    申请号:US17637458

    申请日:2021-04-21

    Abstract: A display substrate includes a driving circuit layer arranged on a base and a light emitting structure layer arranged on one side, away from the base, of the driving circuit layer; the light emitting structure layer includes an anode, a pixel definition layer, an organic light emitting layer, a cathode, and an auxiliary electrode; the pixel definition layer has a first pixel opening exposing the anode and a second pixel opening exposing the auxiliary electrode; the organic light emitting layer connected to the anode and the cathode connected to the organic light emitting layer are arranged in the first pixel opening; the organic light emitting layer separated from the auxiliary electrode and the cathode located on one side, away from the base, of the organic light emitting layer are arranged in the second pixel opening; and the cathode is connected to the auxiliary electrode in the second pixel opening.

    DISPLAY SUBSTRATE AND METHOD OF PREPARING THE SAME, AND DISPLAY DEVICE

    公开(公告)号:US20200098797A1

    公开(公告)日:2020-03-26

    申请号:US16399508

    申请日:2019-04-30

    Abstract: A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.

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