公开(公告)号：US10404037B2

公开(公告)日：2019-09-03

申请号：US16027709

申请日：2018-07-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira Higuchi ,  Yoshitaka Kurosaka ,  Tadataka Edamura ,  Masahiro Hitaka

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.

公开(公告)号：US10186837B2

公开(公告)日：2019-01-22

申请号：US15120149

申请日：2015-02-13

Applicant: Kyoto University ,  HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi Hirose ,  Akiyoshi Watanabe ,  Yoshitaka Kurosaka ,  Takahiro Sugiyama ,  Susumu Noda

IPC: H01S5/026 ,  H01S5/10 ,  H01S5/18 ,  H01S5/042 ,  H01S5/343 ,  H01S5/00 ,  H01S5/022 ,  H01S5/062 ,  H01S5/065

Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

公开(公告)号：US20150034901A1

公开(公告)日：2015-02-05

申请号：US14373967

申请日：2012-11-07

Applicant: Kyoto University ,  HAMAMATSU PHOTONICS K.K.

Inventor： Susumu Noda ,  Yoshitaka Kurosaka ,  Akiyoshi Watanabe ,  Kazuyoshi Hirose ,  Takahiro Sugiyama

IPC: H01L33/10

CPC classification number: H01L33/105 ,  H01L2933/0083 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/18 ,  H01S5/183 ,  H01S2301/02 ,  H01S2301/176

Abstract: A semiconductor light emitting element includes an electrode 8, an active layer 3, a photonic crystal layer 4, and an electrode 9. Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8, the active layer 3, the photonic crystal layer 4, and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8a2 of the opening 8a when viewed from the axis line direction of the X-axis. The end 9e1 of the electrode 9 and the end 8e1 of the opening 8a substantially coincide with each other when viewed from the axis line direction of the X-axis.

Abstract translation: 半导体发光元件包括电极8，有源层3，光子晶体层4和电极9.有源层3和电极8之间以及有源层3和电极9之间的电导率类型各自不同 其他。 电极8，有源层3，光子晶体层4和电极9沿着X轴重叠。 当从X轴的轴线方向观察时，X轴穿过开口8a的中心部分8a2。 当从X轴的轴线方向观察时，电极9的端部9e1和开口8a的端部8e1基本上彼此重合。