公开(公告)号：US07426081B2

公开(公告)日：2008-09-16

申请号：US11585283

申请日：2006-10-24

申请人： Ki Mun Paik ,  Youn Kyun Bin ,  Jung Seok Lee ,  Dong Kyun Lee ,  Byung Woo Kang ,  Jung Ho Ryu ,  Sung Deuk Kim ,  Burhanettin Koc

发明人： Ki Mun Paik ,  Youn Kyun Bin ,  Jung Seok Lee ,  Dong Kyun Lee ,  Byung Woo Kang ,  Jung Ho Ryu ,  Sung Deuk Kim ,  Burhanettin Koc

IPC分类号： G02B15/14 ,  G02B27/00

CPC分类号： G02B7/102

摘要： The invention provides a lens transfer device including at least one lens and a lens barrel. The lens barrel has a lens receiving part with the lens arranged in an inner space thereof and an extension extending radially from an outer surface of the lens receiving part. An actuator has a body and an output member at a leading end of the actuator to contact the extension, and is adapted to expand/contract and bend in response to an external supply voltage to provide a driving force necessary for transfer of the lens barrel through the output member. A pressing member has a free end contacting a rear end of the actuator to force the actuator against the extension, and a guide guides the transfer of the lens barrel along an optical axis.

摘要翻译： 本发明提供一种透镜传送装置，其包括至少一个透镜和镜筒。 透镜镜筒具有透镜接收部分，透镜布置在其内部空间中，并且具有从透镜接收部分的外表面径向延伸的延伸部。 致动器具有在致动器的前端处的主体和输出构件以接触延伸部，并且适于响应于外部电源电压而膨胀/收缩和弯曲，以提供透镜筒通过所需的驱动力 输出成员。 按压构件具有接触致动器的后端的自由端以迫使致动器抵靠延伸部，并且引导件引导透镜镜筒沿着光轴的传送。

公开(公告)号：US07382080B2

公开(公告)日：2008-06-03

申请号：US11139516

申请日：2005-05-31

申请人： Gui Youn Lee ,  Dong Kyun Lee ,  Jung Ho Ryu ,  Byung Woo Kang ,  Hyoung Jun Jeon

发明人： Gui Youn Lee ,  Dong Kyun Lee ,  Jung Ho Ryu ,  Byung Woo Kang ,  Hyoung Jun Jeon

IPC分类号： H02N2/08

CPC分类号： H02N2/147 ,  H02N2/0015

摘要： The present invention provides a piezoelectric ultrasonic motor driver which can perform self-oscillation, adjust the rotational direction of the motor, and be easy to manufacture. The motor includes a metal body having a desired shape; a plurality of piezoelectric plates attached to surfaces of the metal body, contracted and expanded to rotate the metal body; a self-oscillation unit for oscillating at an electromechanical frequency of the piezoelectric plates an electrical signal; and a delay unit for delaying an oscillation signal of the self-oscillation unit in phase by 90 or −90 degrees according to a desired rotational direction.

摘要翻译： 本发明提供一种能够进行自振荡的压电超声波马达驱动器，调整电动机的旋转方向，易于制造。 马达包括具有期望形状的金属体; 多个压电板，附接到金属体的表面，收缩并膨胀以使金属体旋转; 自振荡单元，用于在压电板的机电频率处振荡电信号; 以及延迟单元，用于根据期望的旋转方向将自振荡单元的振荡信号相位延迟90度或-90度。

公开(公告)号：US20120098132A1

公开(公告)日：2012-04-26

申请号：US13279546

申请日：2011-10-24

申请人： Cheol Hwan PARK ,  Ho Jin Cho ,  Dong Kyun Lee

发明人： Cheol Hwan PARK ,  Ho Jin Cho ,  Dong Kyun Lee

IPC分类号： H01L29/43 ,  H01L21/28

CPC分类号： H01L28/75

摘要： A semiconductor device with a stable structure having high capacitance by changing the pillar type storage node structure and a method of manufacturing the same are provided. The method includes forming a sacrificial layer on a semiconductor substrate including a storage node contact plug, etching the sacrificial layer to form a region exposing the storage node contact plug, forming a first conductive material within an inner side of the region, burying a second conductive material within the region in which the first conductive material is formed, and removing the sacrificial layer to form a pillar type storage node.

摘要翻译： 提供了通过改变柱型存储节点结构具有高电容的稳定结构的半导体器件及其制造方法。 该方法包括在包括存储节点接触插塞的半导体衬底上形成牺牲层，蚀刻牺牲层以形成露出存储节点接触插塞的区域，在该区域内侧形成第一导电材料，将第二导电 在其中形成第一导电材料的区域内的材料，以及去除牺牲层以形成柱状存储节点。

公开(公告)号：US08148764B2

公开(公告)日：2012-04-03

申请号：US13185873

申请日：2011-07-19

申请人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

发明人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894

摘要： A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

摘要翻译： 提出了具有高方位圆柱形电容器的半导体器件及其制造方法。 高档圆柱型电容器是一种稳定的结构，不容易造成保护环中的掩体缺陷和损失。 半导体器件包括圆柱形电容器结构，存储节点氧化物，保护环孔，导电层和封盖氧化物。 单元区域中的圆柱型电容器结构包括圆筒形下电极，电介质和上电极。 存储节点氧化物位于半导体衬底上的周边区域中。 导电层涂覆保护环孔。 在与半导体基板上的单元区域相邻的周边区域的边界处的保护环孔。 覆盖氧化物部分地填充导电层的一部分。 间隙填充膜填充在导电层的其余部分。

公开(公告)号：US07723183B2

公开(公告)日：2010-05-25

申请号：US12499248

申请日：2009-07-08

申请人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Soo Kim ,  Dong Kyun Lee

发明人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Soo Kim ,  Dong Kyun Lee

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/91

摘要： A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

摘要翻译： 通过在具有存储节点接触插塞的半导体衬底上形成缓冲氧化物层，蚀刻停止层和模具绝缘层来制造电容器。 蚀刻模具绝缘层和蚀刻停止层，以在存储节点接触插塞的上部形成孔。 在包括孔的模具绝缘层上沉积渐缩层。 锥形层和缓冲氧化物层被回蚀刻，使得锥形层仅保留在蚀刻孔的上端部。 在剩余的锥形层上形成在蚀刻孔上的金属储存节点层。 去除模具绝缘层和剩余的锥形层以形成具有锥形上端的圆柱形存储节点。 在存储节点上形成介电层和板状节点。