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公开(公告)号：US20210305337A1
公开(公告)日：2021-09-30
申请号：US17346539
申请日：2021-06-14
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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Patent Agency Ranking
公开(公告)号：US10930786B2
公开(公告)日：2021-02-23
申请号：US16554657
申请日：2019-08-29
Inventor： Yuankui Ding , Ce Zhao , Guangcai Yuan , Yingbin Hu , Leilei Cheng , Jun Cheng , Bin Zhou
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
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33.发明授权公开(公告)号：US10923347B2
公开(公告)日：2021-02-16
申请号：US16442830
申请日：2019-06-17
Inventor： Wei Song , Ce Zhao , Heekyu Kim , Ning Liu , Yuankui Ding , Wei Li , Yingbin Hu
Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
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公开(公告)号：US10916615B1
公开(公告)日：2021-02-09
申请号：US16826992
申请日：2020-03-23
Inventor： Yingbin Hu , Ce Zhao , Ming Wang , Yuankui Ding , Wei Song , Liangchen Yan
Abstract: A display panel includes a substrate; a conductive layer disposed on the substrate; a gate insulating layer disposed on the conductive layer; a gate layer disposed on the gate insulating layer, wherein the gate layer has a thickness larger than a thickness of the conductive layer; a groove extending toward the substrate and punching through the gate layer, orthographic projections of the groove and the conductive layer on the substrate overlapping, and gate layers separated on two sides of the groove being connected to the conductive layer; an interlayer dielectric layer disposed on a side of the gate layer away from the substrate and covering the conductive layer and filling the groove; and an auxiliary electrode layer disposed on the interlayer dielectric layer, wherein the orthographic projections of the auxiliary electrode layer and the gate layer on substrate do not overlap, and the orthographic projections of the auxiliary electrode layer and the groove on the substrate overlap.
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35.发明申请公开(公告)号：US20200035836A1
公开(公告)日：2020-01-30
申请号：US16393023
申请日：2019-04-24
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Li , Wei Song , Luke Ding , Jun Liu , Liangchen Yan
IPC: H01L29/786 , H01L29/66 , H01L27/32
Abstract: Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.
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36.发明申请公开(公告)号：US20180212182A1
公开(公告)日：2018-07-26
申请号：US15567816
申请日：2017-05-19
Inventor： Yongchao Huang , Yuankui Ding , Leilei Cheng , Min He
CPC classification number: H01L51/5203 , H01L51/0045 , H01L51/50 , H01L51/5012 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092
Abstract: A light emitting unit and a manufacturing method thereof, a display panel and an electronic device. The light emitting unit includes a first electrode, a second electrode and a light emitting layer between the first electrode and the second electrode. A material of the light emitting layer 3 includes graphene. The light emitting layer of the light emitting unit can emit light at a single wavelength.
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