公开(公告)号：US11940567B1

公开(公告)日：2024-03-26

申请号：US18060948

申请日：2022-12-01

Applicant: Aurora Operations, Inc.

Inventor： Amir Hosseini ,  Sen Lin

IPC: G01S7/4912 ,  B60W10/18 ,  B60W10/20 ,  B60W60/00 ,  G01S17/34 ,  G01S17/58 ,  G01S17/931 ,  G08G1/0968 ,  H01L29/74

CPC classification number: G01S7/4917 ,  B60W10/18 ,  B60W10/20 ,  B60W60/001 ,  B60W60/0015 ,  G01S17/34 ,  G01S17/58 ,  G01S17/931 ,  G08G1/0968 ,  H01L29/7428 ,  B60W2420/52 ,  B60W2554/4042 ,  B60W2554/802 ,  B60W2710/18 ,  B60W2710/20

Abstract: A light detection and ranging (LIDAR) sensor system mounted to a vehicle includes a first device and a second device coupled to the first device. The first device includes a laser source and one or more optical components. The first device is configured to output an optical signal associated with a local oscillator (LO) signal. The second device includes an optical amplifier array device and a transceiver device. The optical amplifier array device includes an integrated optical component and is configured to amplify the optical signal. The transceiver device is configured to transmit the amplified optical signal to an environment and receive a returned optical signal that is reflected from an object in the environment.

公开(公告)号：US20240061178A1

公开(公告)日：2024-02-22

申请号：US18497717

申请日：2023-10-30

Applicant: Aurora Operations, Inc.

Inventor： Sen Lin ,  Andrew Steil Michaels

IPC: G02B6/136 ,  G01S7/481

CPC classification number: G02B6/136 ,  G01S7/4816 ,  G02B2006/12107

Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

公开(公告)号：US11880000B2

公开(公告)日：2024-01-23

申请号：US17889202

申请日：2022-08-16

Applicant: Aurora Operations, Inc.

Inventor： Amir Hosseini ,  Sen Lin ,  Andrew Steil Michaels

IPC: G01S7/481 ,  G01S17/931 ,  G01S7/491

CPC classification number: G01S7/4818 ,  G01S7/4811 ,  G01S7/491 ,  G01S17/931

Abstract: A LIDAR transceiver includes a source input, coherent cells, and an optical switch. The optical switch is configured to switchably couple the source input to the coherent cells. At least one of the coherent cells includes an input port, an optical antenna, and a splitter. The input port is coupled to the optical switch and the splitter is coupled between the input port and the optical antenna. The splitter is configured to split a received portion of a laser signal into a local oscillator signal and a transmit signal, where the transmit signal is emitted through the optical antenna. A reflection of the transmit signal is received through the optical antenna as a reflected signal, where the splitter is further configured to output a return signal that is a portion of the reflected signal.

公开(公告)号：US11835765B2

公开(公告)日：2023-12-05

申请号：US18051337

申请日：2022-10-31

Applicant: Aurora Operations, Inc.

Inventor： Sen Lin ,  Andrew Steil Michaels

IPC: G02B6/12 ,  G02B6/136 ,  G01S7/481

CPC classification number: G02B6/136 ,  G01S7/4816 ,  G02B2006/12061 ,  G02B2006/12107

Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.