公开(公告)号：US20080185587A1

公开(公告)日：2008-08-07

申请号：US11928697

申请日：2007-10-30

申请人： Sang-Woo Whangbo ,  Jun-Hyung Souk ,  Yong-Suk Jin ,  Jin-Ho Ju ,  Min Kang ,  Myo-Kyong Joo

发明人： Sang-Woo Whangbo ,  Jun-Hyung Souk ,  Yong-Suk Jin ,  Jin-Ho Ju ,  Min Kang ,  Myo-Kyong Joo

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1218 ,  G02F1/1333 ,  G02F2001/133302 ,  G02F2001/133357 ,  H01L27/1214 ,  H01L29/78603

摘要： A display panel and a manufacturing method in which the display panel includes an alkali-containing glass substrate having a surface waviness of less about 0.06 μm, a gate electrode formed the substrate, a gate insulating layer formed on the gate electrode, a semiconductor formed on the gate insulating layer, a source electrode and a drain electrode contacting the semiconductor, and a pixel electrode electrically connected to the drain electrode.

摘要翻译： 一种显示面板及其制造方法，其特征在于，所述显示面板包括具有小于0.06μm的表面波度的含碱玻璃基板，形成在所述基板上的栅电极，形成在所述栅电极上的栅极绝缘层， 栅极绝缘层，与半导体接触的源电极和漏电极以及与漏电极电连接的像素电极。

公开(公告)号：US07265799B2

公开(公告)日：2007-09-04

申请号：US10759389

申请日：2004-01-16

申请人： Jun-Hyung Souk ,  Jeong-Young Lee ,  Jong-Soo Yoon ,  Kwon-Young Choi ,  Bum-Ki Baek

发明人： Jun-Hyung Souk ,  Jeong-Young Lee ,  Jong-Soo Yoon ,  Kwon-Young Choi ,  Bum-Ki Baek

IPC分类号： G02F1/136 ,  H01L29/04

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288

摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，该方法包括：在绝缘基板上形成栅极线; 形成栅极绝缘层; 形成半导体层; 形成包括数据线和漏电极的数据导电层; 沉积钝化层; 形成包括位于所述栅极线的端部的第一部分的光致抗蚀剂，比所述第一部分更厚且位于所述漏极上的第二部分，以及比所述第二部分更厚的第三部分; 通过使用光致抗蚀剂作为蚀刻掩模，将光致抗蚀剂的第二部分下的钝化层的一部分暴露在光致抗蚀剂的第一部分下方的栅绝缘层的一部分; 形成分别露出所述漏电极和所述栅极线的端部的第一和第二接触孔; 以及通过所述第一接触孔形成连接到所述漏电极的像素电极。

公开(公告)号：US06545295B2

公开(公告)日：2003-04-08

申请号：US10137923

申请日：2002-05-02

申请人： John Batey ,  Peter M. Fryer ,  Jun Hyung Souk

发明人： John Batey ,  Peter M. Fryer ,  Jun Hyung Souk

IPC分类号： H01L2900

CPC分类号： H01L29/66765 ,  G02F2001/136295 ,  H01L21/28008 ,  H01L21/3185 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/6675

摘要： A thin film transistor and a liquid crystal display panel are provided. These devices include a layer of ammonia-free silicon nitride formed between the gate and the gate insulator of the device.

摘要翻译： 提供薄膜晶体管和液晶显示面板。 这些装置包括在器件的栅极和栅极绝缘体之间形成的无氨氮化硅层。

公开(公告)号：US06420282B1

公开(公告)日：2002-07-16

申请号：US09658181

申请日：2000-09-08

申请人： John Batey ,  Peter M. Fryer ,  Jun Hyung Souk

发明人： John Batey ,  Peter M. Fryer ,  Jun Hyung Souk

IPC分类号： H01L2126

CPC分类号： H01L29/66765 ,  G02F2001/136295 ,  H01L21/28008 ,  H01L21/3185 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/6675

摘要： A method for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display and a method of constructing the same, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper,aluminum, or other refractory metal gate and the gate insulator. Further,. the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The layer is made in a plasma-enhanced chemical vapor deposition process wherein the gas mixture comprises one part silane to 135 parts nitrogen to 100 parts helium and 100 parts hydrogen. A structure, and a process for forming the structure, for providing stable and low-resistance electrical contact between copper,aluminum, or another refractory metal gate lines and a metallization layer of aluminum and/or molybdenum, includes using a conductive material, such as an indium tin oxide bridge. Prior to depositing the metallization layer, the copper,aluminum, or other refractory metal which extends over a portion of the conductive material, and a portion of the conductive material not covered by the copper,aluminum, or other refractory metal are passivated with a layer of the ammonia-free silicon nitride. The metallization layer is then connected to the conductive material through a via hole extending to that portion of the conductive material which is not covered by the copper, aluminum, or another refractory metal.

摘要翻译： 一种使用无氨氮化硅钝化铜，铝或其它难熔金属膜的方法，以及通过该方法制造的结构。 一种用于液晶显示器的薄膜晶体管及其构造方法，其中晶体管具有栅极，源极和漏极以及栅极与有源硅层之间的栅极绝缘体。 改进之处在于沉积在铜，铝或其它难熔金属栅极与栅绝缘体之间的无氨氮化硅层。 进一步，。 门是铜，铝或另一难熔金属，并直接沉积在基底上。 无氨氮化硅层也沉积在与栅极相邻的衬底的部分上以及从其延伸的栅极线上。 该层由等离子体增强化学气相沉积工艺制成，其中气体混合物包含一部分硅烷至135份氮至100份氦和100份氢。 铜，铝或另一难熔金属栅极线以及铝和/或钼的金属化层之间提供稳定且低电阻的电接触的结构和形成该结构的方法包括使用导电材料，例如 氧化铟锡桥。 在沉积金属化层之前，在导电材料的一部分上延伸的铜，铝或其它难熔金属以及未被铜，铝或其它难熔金属覆盖的导电材料的一部分被钝化， 的无氨氮化硅。 金属化层然后通过延伸到未被铜，铝或其他难熔金属覆盖的导电材料的那部分的通孔连接到导电材料。